Temperature dependence of surface plasmon and breakdown for thin and thick silicon-dioxide

Jong Hyun Kim, Julian J. Sanchez, Thomas A. DeMassa, Mohammed T. Quddus, Robert O. Grondin, Chuan H. Liu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The anode hole injection oxide breakdown model based upon surface plasmons is presented. The increase in conductance at bias voltages near the surface plasmon energy is observed on metal-oxide-semiconductor capacitors. The surface plasmon excitation threshold energy decreases with increasing temperature which causes the positive charge generation to increase and the charge to breakdown to decrease. Therefore, the anode hole injection model based upon surface plasmons is a reasonable thin oxide breakdown model that confirms experimental observations.

Original languageEnglish
Pages (from-to)57-63
Number of pages7
JournalSolid-State Electronics
Volume43
Issue number1
DOIs
Publication statusPublished - 1999 Jan 1

Fingerprint

Silicon Dioxide
breakdown
Silica
silicon dioxide
temperature dependence
Plasmons
plasmons
Oxides
Anodes
anodes
injection
Temperature
oxides
Bias voltage
metal oxide semiconductors
capacitors
Capacitors
Metals
thresholds
energy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Temperature dependence of surface plasmon and breakdown for thin and thick silicon-dioxide. / Kim, Jong Hyun; Sanchez, Julian J.; DeMassa, Thomas A.; Quddus, Mohammed T.; Grondin, Robert O.; Liu, Chuan H.

In: Solid-State Electronics, Vol. 43, No. 1, 01.01.1999, p. 57-63.

Research output: Contribution to journalArticle

Kim, Jong Hyun ; Sanchez, Julian J. ; DeMassa, Thomas A. ; Quddus, Mohammed T. ; Grondin, Robert O. ; Liu, Chuan H. / Temperature dependence of surface plasmon and breakdown for thin and thick silicon-dioxide. In: Solid-State Electronics. 1999 ; Vol. 43, No. 1. pp. 57-63.
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