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Temperature dependence of substrate currents of MOSFETs under different drain and gate biases
Chuan Hsi Liu
, Shuang Yuan Chen
*
, Chia Hao Tu
, Heng Sheng Huang
, Sam Chou
, Joe Ko
*
Corresponding author for this work
Department of Mechatronic Engineering
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Engineering
Gate Bias
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Drain Voltage
100%
Drain Bias
100%
Temperature Dependence
100%
Gate Voltage
66%
Transition Point
66%
Scattering Effect
33%
Carrier Effect
33%
Electric Field
33%
Mathematical Model
33%
Metal-Oxide-Semiconductor Field Effect Transistor (Mosfets)
33%
INIS
temperature dependence
100%
substrates
100%
voltage
100%
mosfet
100%
variations
25%
sensitivity
25%
modeling
25%
accuracy
25%
oxides
25%
electrons
25%
metals
25%
scattering
25%
carriers
25%
mathematical models
25%
phonons
25%
semiconductor materials
25%
field effect transistors
25%
electric fields
25%
kinetic energy
25%
Material Science
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Hot Carrier
50%