Abstract
In this study, the problem of substrate currents of metal-oxide- semiconductor field-effect transistors exhibiting different temperature dependence at different gate and drain voltages is investigated. The unsolved so-called 'transition point' problem is found to be ascribable to the different sensitivities of thermal kinetic energy and phonon scattering effects to the variation of drain voltages. To include the influence of temperature and gate voltage, a new mathematical model for substrate current is proposed, which also reveals that modeling using the lucky electron approach cannot obtain satisfactory accuracy and that the transverse electrical field from gate bias is not a negligible factor. With the evidence from experiments, this article also points out that using the substrate current to monitor the severity of the hot-carrier effect is not reliable when the drain voltage is lower than the transition point.
| Original language | English |
|---|---|
| Pages (from-to) | 441-448 |
| Number of pages | 8 |
| Journal | Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an |
| Volume | 34 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2011 Apr 1 |
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Keywords
- Hot-carrier
- MOSFETs
- Substrate current
- Temperature
ASJC Scopus subject areas
- Engineering(all)
Cite this
Temperature dependence of substrate currents of MOSFETs under different drain and gate biases. / Liu, Chuan-Hsi; Chen, Shuang Yuan; Tu, Chia Hao; Huang, Heng Sheng; Chou, Sam; Ko, Joe.
In: Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an, Vol. 34, No. 3, 01.04.2011, p. 441-448.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Temperature dependence of substrate currents of MOSFETs under different drain and gate biases
AU - Liu, Chuan-Hsi
AU - Chen, Shuang Yuan
AU - Tu, Chia Hao
AU - Huang, Heng Sheng
AU - Chou, Sam
AU - Ko, Joe
PY - 2011/4/1
Y1 - 2011/4/1
N2 - In this study, the problem of substrate currents of metal-oxide- semiconductor field-effect transistors exhibiting different temperature dependence at different gate and drain voltages is investigated. The unsolved so-called 'transition point' problem is found to be ascribable to the different sensitivities of thermal kinetic energy and phonon scattering effects to the variation of drain voltages. To include the influence of temperature and gate voltage, a new mathematical model for substrate current is proposed, which also reveals that modeling using the lucky electron approach cannot obtain satisfactory accuracy and that the transverse electrical field from gate bias is not a negligible factor. With the evidence from experiments, this article also points out that using the substrate current to monitor the severity of the hot-carrier effect is not reliable when the drain voltage is lower than the transition point.
AB - In this study, the problem of substrate currents of metal-oxide- semiconductor field-effect transistors exhibiting different temperature dependence at different gate and drain voltages is investigated. The unsolved so-called 'transition point' problem is found to be ascribable to the different sensitivities of thermal kinetic energy and phonon scattering effects to the variation of drain voltages. To include the influence of temperature and gate voltage, a new mathematical model for substrate current is proposed, which also reveals that modeling using the lucky electron approach cannot obtain satisfactory accuracy and that the transverse electrical field from gate bias is not a negligible factor. With the evidence from experiments, this article also points out that using the substrate current to monitor the severity of the hot-carrier effect is not reliable when the drain voltage is lower than the transition point.
KW - Hot-carrier
KW - MOSFETs
KW - Substrate current
KW - Temperature
UR - http://www.scopus.com/inward/record.url?scp=84862960787&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84862960787&partnerID=8YFLogxK
U2 - 10.1080/02533839.2011.565620
DO - 10.1080/02533839.2011.565620
M3 - Article
AN - SCOPUS:84862960787
VL - 34
SP - 441
EP - 448
JO - Chung-kuo Kung Ch'eng Hsueh K'an/Journal of the Chinese Institute of Engineers
JF - Chung-kuo Kung Ch'eng Hsueh K'an/Journal of the Chinese Institute of Engineers
SN - 0253-3839
IS - 3
ER -