Temperature and doping-concentration dependence of the oscillatory properties of the photoreflectance spectra from GaAs grown by molecular-beam epitaxy

C. R. Lu; J. R. Anderson; D. R. Stone; W. T. Beard; R. A. Wilson; T. F. Kuech; S. L. Wright

doi:10.1103/PhysRevB.43.11791

Temperature and doping-concentration dependence of the oscillatory properties of the photoreflectance spectra from GaAs grown by molecular-beam epitaxy

C. R. Lu^*, J. R. Anderson, D. R. Stone, W. T. Beard, R. A. Wilson, T. F. Kuech, S. L. Wright

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

The temperature and doping-concentration dependence of the oscillatory properties in the photoreflectance (PR) spectra of GaAs grown by molecular-beam epitaxy has been studied in detail. The peak separation of the oscillatory part of the PR spectrum is related to the internal electric field in the sample. Both the peak spacing of the oscillations and the internal electric field increase with increasing temperature and doping density. A PR spectrum with two kinds of oscillations from two interfaces across different doping profiles was also observed. Our study of oscillatory properties not only verified the electromodulation character of the PR experiment but also extracted the temperature dependence of the surface Fermi level.

Original language	English
Pages (from-to)	11791-11797
Number of pages	7
Journal	Physical Review B
Volume	43
Issue number	14
DOIs	https://doi.org/10.1103/PhysRevB.43.11791
Publication status	Published - 1991
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics

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10.1103/PhysRevB.43.11791

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@article{afd882d249b649c6946df2ce73f1b6e6,

title = "Temperature and doping-concentration dependence of the oscillatory properties of the photoreflectance spectra from GaAs grown by molecular-beam epitaxy",

abstract = "The temperature and doping-concentration dependence of the oscillatory properties in the photoreflectance (PR) spectra of GaAs grown by molecular-beam epitaxy has been studied in detail. The peak separation of the oscillatory part of the PR spectrum is related to the internal electric field in the sample. Both the peak spacing of the oscillations and the internal electric field increase with increasing temperature and doping density. A PR spectrum with two kinds of oscillations from two interfaces across different doping profiles was also observed. Our study of oscillatory properties not only verified the electromodulation character of the PR experiment but also extracted the temperature dependence of the surface Fermi level.",

author = "Lu, {C. R.} and Anderson, {J. R.} and Stone, {D. R.} and Beard, {W. T.} and Wilson, {R. A.} and Kuech, {T. F.} and Wright, {S. L.}",

year = "1991",

doi = "10.1103/PhysRevB.43.11791",

language = "English",

volume = "43",

pages = "11791--11797",

journal = "Physical Review B",

issn = "0163-1829",

publisher = "American Physical Society",

number = "14",

}

TY - JOUR

T1 - Temperature and doping-concentration dependence of the oscillatory properties of the photoreflectance spectra from GaAs grown by molecular-beam epitaxy

AU - Lu, C. R.

AU - Anderson, J. R.

AU - Stone, D. R.

AU - Beard, W. T.

AU - Wilson, R. A.

AU - Kuech, T. F.

AU - Wright, S. L.

PY - 1991

Y1 - 1991

N2 - The temperature and doping-concentration dependence of the oscillatory properties in the photoreflectance (PR) spectra of GaAs grown by molecular-beam epitaxy has been studied in detail. The peak separation of the oscillatory part of the PR spectrum is related to the internal electric field in the sample. Both the peak spacing of the oscillations and the internal electric field increase with increasing temperature and doping density. A PR spectrum with two kinds of oscillations from two interfaces across different doping profiles was also observed. Our study of oscillatory properties not only verified the electromodulation character of the PR experiment but also extracted the temperature dependence of the surface Fermi level.

AB - The temperature and doping-concentration dependence of the oscillatory properties in the photoreflectance (PR) spectra of GaAs grown by molecular-beam epitaxy has been studied in detail. The peak separation of the oscillatory part of the PR spectrum is related to the internal electric field in the sample. Both the peak spacing of the oscillations and the internal electric field increase with increasing temperature and doping density. A PR spectrum with two kinds of oscillations from two interfaces across different doping profiles was also observed. Our study of oscillatory properties not only verified the electromodulation character of the PR experiment but also extracted the temperature dependence of the surface Fermi level.

UR - http://www.scopus.com/inward/record.url?scp=0000926752&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000926752&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.43.11791

DO - 10.1103/PhysRevB.43.11791

M3 - Article

AN - SCOPUS:0000926752

SN - 0163-1829

VL - 43

SP - 11791

EP - 11797

JO - Physical Review B

JF - Physical Review B

IS - 14

ER -

Temperature and doping-concentration dependence of the oscillatory properties of the photoreflectance spectra from GaAs grown by molecular-beam epitaxy

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