Temperature and doping-concentration dependence of the oscillatory properties of the photoreflectance spectra from GaAs grown by molecular-beam epitaxy

C. R. Lu, J. R. Anderson, D. R. Stone, W. T. Beard, R. A. Wilson, T. F. Kuech, S. L. Wright

Research output: Contribution to journalArticle

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Abstract

The temperature and doping-concentration dependence of the oscillatory properties in the photoreflectance (PR) spectra of GaAs grown by molecular-beam epitaxy has been studied in detail. The peak separation of the oscillatory part of the PR spectrum is related to the internal electric field in the sample. Both the peak spacing of the oscillations and the internal electric field increase with increasing temperature and doping density. A PR spectrum with two kinds of oscillations from two interfaces across different doping profiles was also observed. Our study of oscillatory properties not only verified the electromodulation character of the PR experiment but also extracted the temperature dependence of the surface Fermi level.

Original languageEnglish
Pages (from-to)11791-11797
Number of pages7
JournalPhysical Review B
Volume43
Issue number14
DOIs
Publication statusPublished - 1991 Jan 1

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Molecular beam epitaxy
molecular beam epitaxy
Doping (additives)
Electric fields
oscillations
electric fields
Fermi level
Temperature
Fermi surfaces
temperature
spacing
temperature dependence
profiles
gallium arsenide
Experiments

ASJC Scopus subject areas

  • Condensed Matter Physics

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Temperature and doping-concentration dependence of the oscillatory properties of the photoreflectance spectra from GaAs grown by molecular-beam epitaxy. / Lu, C. R.; Anderson, J. R.; Stone, D. R.; Beard, W. T.; Wilson, R. A.; Kuech, T. F.; Wright, S. L.

In: Physical Review B, Vol. 43, No. 14, 01.01.1991, p. 11791-11797.

Research output: Contribution to journalArticle

Lu, C. R. ; Anderson, J. R. ; Stone, D. R. ; Beard, W. T. ; Wilson, R. A. ; Kuech, T. F. ; Wright, S. L. / Temperature and doping-concentration dependence of the oscillatory properties of the photoreflectance spectra from GaAs grown by molecular-beam epitaxy. In: Physical Review B. 1991 ; Vol. 43, No. 14. pp. 11791-11797.
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