Temperature and bias dependences of defect mode in a photonic crystal containing a photonic-quantum-well defect

Yang Hua Chang, Ying Yan Jhu, Chien Jang Wu

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    Abstract

    The temperature- and bias-dependent properties of the defect mode in a one-dimensional photonic crystal (1D PC) containing a photonic-quantum-well (PQW) defect are theoretically investigated. The temperature dependence is studied by simultaneously incorporating thermal expansion and thermal-optical effects in the constituent layers. As the thickness and index of refraction of each layer are modulated by temperature, a tunable filter working in the visible region is proposed. The shift of transmittance peak per 100 °C is around 2 nm, depending on the value of m, which is the stack number of the PQW and ranges between 1 and 3 in our study. It is found that the third transmittance peak in the case of m = 3 is most sensitive to temperature (2.43 nm per 100 °C), whereas the second transmittance peak of m = 3 is the sharpest. The bias dependence is studied by considering the electro-optic effect of the defected layer. The shifts of transmittance peaks are found to be in the range of 0.129 ∼ 0.188 nm per 1 kV of applied voltage. Additionally, the second transmittance peak of m = 3 is most sensitive to voltage, and it is also the sharpest peak.

    Original languageEnglish
    Pages (from-to)185-192
    Number of pages8
    JournalJournal of Optoelectronics and Advanced Materials
    Volume14
    Issue number3-4
    Publication statusPublished - 2012 Mar

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    Keywords

    • Electro-optic effect
    • Photonic crystal
    • Photonic quantum-well
    • Thermal effect

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Atomic and Molecular Physics, and Optics
    • Electrical and Electronic Engineering

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