Tantalum nitride for copper diffusion blocking on thin film (BiSb) 2Te3

H. H. Hsu, C. H. Cheng*, C. K. Lin, K. Y. Chen, Y. L. Lin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution


This study demonstrates the feasibility of introducing a TaN thin film as a copper diffusion barrier for p-type (BiSb)2Te3 thermoelectric material. Compared to conventional Ni diffusion barrier, remarkably little void generation in Cu bulk or near Cu/TaN interface originated from Cu penetration is observed for TaN barrier after suffering the thermal budget of close to soldering. Diffusion behaviors of the barriers were analyzed by transmission electron microscopy (TEM) and energy dispersive spectrometry (EDS) to make a deep understanding in clarifying interface diffusion effects among the Cu electrode, the barrier layer, and the (BiSb)2Te 3 thermoelectric layer.

Original languageEnglish
Title of host publicationThermoelectric Materials Research and Device Development for Power Conversion and Refrigeration
Number of pages6
Publication statusPublished - 2013
Event2012 MRS Fall Meeting - Boston, MA, United States
Duration: 2012 Nov 252012 Nov 30

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2012 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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