Tantalum nitride for copper diffusion blocking on thin film (BiSb) 2Te3

H. H. Hsu; C. H. Cheng; C. K. Lin; K. Y. Chen; Y. L. Lin

doi:10.1557/opl.2012.1645

Tantalum nitride for copper diffusion blocking on thin film (BiSb) ₂Te₃

H. H. Hsu, C. H. Cheng^*, C. K. Lin, K. Y. Chen, Y. L. Lin

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This study demonstrates the feasibility of introducing a TaN thin film as a copper diffusion barrier for p-type (BiSb)₂Te₃ thermoelectric material. Compared to conventional Ni diffusion barrier, remarkably little void generation in Cu bulk or near Cu/TaN interface originated from Cu penetration is observed for TaN barrier after suffering the thermal budget of close to soldering. Diffusion behaviors of the barriers were analyzed by transmission electron microscopy (TEM) and energy dispersive spectrometry (EDS) to make a deep understanding in clarifying interface diffusion effects among the Cu electrode, the barrier layer, and the (BiSb)₂Te ₃ thermoelectric layer.

Original language	English
Title of host publication	Thermoelectric Materials Research and Device Development for Power Conversion and Refrigeration
Pages	145-150
Number of pages	6
DOIs	https://doi.org/10.1557/opl.2012.1645
Publication status	Published - 2013
Event	2012 MRS Fall Meeting - Boston, MA, United States Duration: 2012 Nov 25 → 2012 Nov 30

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1490
ISSN (Print)	0272-9172

Other

Other	2012 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	2012/11/25 → 2012/11/30

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1557/opl.2012.1645

Cite this

Tantalum nitride for copper diffusion blocking on thin film (BiSb) ₂Te₃. / Hsu, H. H.; Cheng, C. H.; Lin, C. K. et al.
Thermoelectric Materials Research and Device Development for Power Conversion and Refrigeration. 2013. p. 145-150 (Materials Research Society Symposium Proceedings; Vol. 1490).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hsu, HH, Cheng, CH, Lin, CK, Chen, KY & Lin, YL 2013, Tantalum nitride for copper diffusion blocking on thin film (BiSb) ₂Te₃. in Thermoelectric Materials Research and Device Development for Power Conversion and Refrigeration. Materials Research Society Symposium Proceedings, vol. 1490, pp. 145-150, 2012 MRS Fall Meeting, Boston, MA, United States, 2012/11/25. https://doi.org/10.1557/opl.2012.1645

@inproceedings{9a6784b3dde24a59b0a1c997fe4ad236,

title = "Tantalum nitride for copper diffusion blocking on thin film (BiSb) 2Te3",

abstract = "This study demonstrates the feasibility of introducing a TaN thin film as a copper diffusion barrier for p-type (BiSb)2Te3 thermoelectric material. Compared to conventional Ni diffusion barrier, remarkably little void generation in Cu bulk or near Cu/TaN interface originated from Cu penetration is observed for TaN barrier after suffering the thermal budget of close to soldering. Diffusion behaviors of the barriers were analyzed by transmission electron microscopy (TEM) and energy dispersive spectrometry (EDS) to make a deep understanding in clarifying interface diffusion effects among the Cu electrode, the barrier layer, and the (BiSb)2Te 3 thermoelectric layer.",

author = "Hsu, {H. H.} and Cheng, {C. H.} and Lin, {C. K.} and Chen, {K. Y.} and Lin, {Y. L.}",

year = "2013",

doi = "10.1557/opl.2012.1645",

language = "English",

isbn = "9781605114675",

series = "Materials Research Society Symposium Proceedings",

pages = "145--150",

booktitle = "Thermoelectric Materials Research and Device Development for Power Conversion and Refrigeration",

note = "2012 MRS Fall Meeting ; Conference date: 25-11-2012 Through 30-11-2012",

}

TY - GEN

T1 - Tantalum nitride for copper diffusion blocking on thin film (BiSb) 2Te3

AU - Hsu, H. H.

AU - Cheng, C. H.

AU - Lin, C. K.

AU - Chen, K. Y.

AU - Lin, Y. L.

PY - 2013

Y1 - 2013

N2 - This study demonstrates the feasibility of introducing a TaN thin film as a copper diffusion barrier for p-type (BiSb)2Te3 thermoelectric material. Compared to conventional Ni diffusion barrier, remarkably little void generation in Cu bulk or near Cu/TaN interface originated from Cu penetration is observed for TaN barrier after suffering the thermal budget of close to soldering. Diffusion behaviors of the barriers were analyzed by transmission electron microscopy (TEM) and energy dispersive spectrometry (EDS) to make a deep understanding in clarifying interface diffusion effects among the Cu electrode, the barrier layer, and the (BiSb)2Te 3 thermoelectric layer.

AB - This study demonstrates the feasibility of introducing a TaN thin film as a copper diffusion barrier for p-type (BiSb)2Te3 thermoelectric material. Compared to conventional Ni diffusion barrier, remarkably little void generation in Cu bulk or near Cu/TaN interface originated from Cu penetration is observed for TaN barrier after suffering the thermal budget of close to soldering. Diffusion behaviors of the barriers were analyzed by transmission electron microscopy (TEM) and energy dispersive spectrometry (EDS) to make a deep understanding in clarifying interface diffusion effects among the Cu electrode, the barrier layer, and the (BiSb)2Te 3 thermoelectric layer.

UR - http://www.scopus.com/inward/record.url?scp=84888020692&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84888020692&partnerID=8YFLogxK

U2 - 10.1557/opl.2012.1645

DO - 10.1557/opl.2012.1645

M3 - Conference contribution

AN - SCOPUS:84888020692

SN - 9781605114675

T3 - Materials Research Society Symposium Proceedings

SP - 145

EP - 150

BT - Thermoelectric Materials Research and Device Development for Power Conversion and Refrigeration

T2 - 2012 MRS Fall Meeting

Y2 - 25 November 2012 through 30 November 2012

ER -