Tantalum nitride for copper diffusion blocking on thin film (BiSb) 2Te3

H. H. Hsu, Chun-Hu Cheng, C. K. Lin, K. Y. Chen, Y. L. Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This study demonstrates the feasibility of introducing a TaN thin film as a copper diffusion barrier for p-type (BiSb)2Te3 thermoelectric material. Compared to conventional Ni diffusion barrier, remarkably little void generation in Cu bulk or near Cu/TaN interface originated from Cu penetration is observed for TaN barrier after suffering the thermal budget of close to soldering. Diffusion behaviors of the barriers were analyzed by transmission electron microscopy (TEM) and energy dispersive spectrometry (EDS) to make a deep understanding in clarifying interface diffusion effects among the Cu electrode, the barrier layer, and the (BiSb)2Te 3 thermoelectric layer.

Original languageEnglish
Title of host publicationThermoelectric Materials Research and Device Development for Power Conversion and Refrigeration
Pages145-150
Number of pages6
DOIs
Publication statusPublished - 2013 Nov 26
Event2012 MRS Fall Meeting - Boston, MA, United States
Duration: 2012 Nov 252012 Nov 30

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1490
ISSN (Print)0272-9172

Other

Other2012 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period12/11/2512/11/30

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Hsu, H. H., Cheng, C-H., Lin, C. K., Chen, K. Y., & Lin, Y. L. (2013). Tantalum nitride for copper diffusion blocking on thin film (BiSb) 2Te3 In Thermoelectric Materials Research and Device Development for Power Conversion and Refrigeration (pp. 145-150). (Materials Research Society Symposium Proceedings; Vol. 1490). https://doi.org/10.1557/opl.2012.1645