Synthesis of Ru1-xSbxSr2(Eu 0.7Ce0.3)2Cu2O10-δ and their magnetic and transport properties

T. R. Yang; G. Ilonca; F. Beiuşan; A. V. Pop; V. Toma; I. Matei; S. Patapis

doi:10.1142/S0217979205032127

Synthesis of Ru_1-xSb_xSr₂(Eu _0.7Ce_0.3)₂Cu₂O_10-δ and their magnetic and transport properties

T. R. Yang^*, G. Ilonca, F. Beiuşan, A. V. Pop, V. Toma, I. Matei, S. Patapis

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Ru_1-xSb_xSr₂(Eu_0.7Ce _0.3)₂Cu₂O_10-δ systems were prepared by conventional solid state reaction method. The structural analysis was investigated using X-ray diffraction. Electrical resistivity, Hall effect and magnetic susceptibility measurements on Ru:1222 doped with Sb are presented, together with results in the temperature range 5-300 K. Transition temperature decreases from 43 K for x = 0.00 to 20 K for x = 0.06 Sb. This may be due to a distortion of RuO₆ octahedral, which is responsible of the increase in hole localization. The Hall effect anomalous decreases below T _magnetic which may be explained within a simple two-band model by a transition from localized to more itinerant behavior in the RuO₂ layer at T_magnetic. The behavior of magnetic susceptibility is caused by an antisymmetric exchange coupling of the Dzyaloshinsky-Morya type between neighboring Ru moments.

Original language	English
Pages (from-to)	3511-3517
Number of pages	7
Journal	International Journal of Modern Physics B
Volume	19
Issue number	22
DOIs	https://doi.org/10.1142/S0217979205032127
Publication status	Published - 2005 Sept 10

Keywords

Resistivity
Susceptibility
X-ray

ASJC Scopus subject areas

Statistical and Nonlinear Physics
Condensed Matter Physics

Access to Document

10.1142/S0217979205032127

Cite this

@article{bd649e62dd8b41cfa32144d980cfec9f,

title = "Synthesis of Ru1-xSbxSr2(Eu 0.7Ce0.3)2Cu2O10-δ and their magnetic and transport properties",

abstract = "Ru1-xSbxSr2(Eu0.7Ce 0.3)2Cu2O10-δ systems were prepared by conventional solid state reaction method. The structural analysis was investigated using X-ray diffraction. Electrical resistivity, Hall effect and magnetic susceptibility measurements on Ru:1222 doped with Sb are presented, together with results in the temperature range 5-300 K. Transition temperature decreases from 43 K for x = 0.00 to 20 K for x = 0.06 Sb. This may be due to a distortion of RuO6 octahedral, which is responsible of the increase in hole localization. The Hall effect anomalous decreases below T magnetic which may be explained within a simple two-band model by a transition from localized to more itinerant behavior in the RuO2 layer at Tmagnetic. The behavior of magnetic susceptibility is caused by an antisymmetric exchange coupling of the Dzyaloshinsky-Morya type between neighboring Ru moments.",

keywords = "Resistivity, Susceptibility, X-ray",

author = "Yang, {T. R.} and G. Ilonca and F. Beiu{\c s}an and Pop, {A. V.} and V. Toma and I. Matei and S. Patapis",

year = "2005",

month = sep,

day = "10",

doi = "10.1142/S0217979205032127",

language = "English",

volume = "19",

pages = "3511--3517",

journal = "International Journal of Modern Physics B",

issn = "0217-9792",

publisher = "World Scientific Publishing Co. Pte Ltd",

number = "22",

}

TY - JOUR

T1 - Synthesis of Ru1-xSbxSr2(Eu 0.7Ce0.3)2Cu2O10-δ and their magnetic and transport properties

AU - Yang, T. R.

AU - Ilonca, G.

AU - Beiuşan, F.

AU - Pop, A. V.

AU - Toma, V.

AU - Matei, I.

AU - Patapis, S.

PY - 2005/9/10

Y1 - 2005/9/10

N2 - Ru1-xSbxSr2(Eu0.7Ce 0.3)2Cu2O10-δ systems were prepared by conventional solid state reaction method. The structural analysis was investigated using X-ray diffraction. Electrical resistivity, Hall effect and magnetic susceptibility measurements on Ru:1222 doped with Sb are presented, together with results in the temperature range 5-300 K. Transition temperature decreases from 43 K for x = 0.00 to 20 K for x = 0.06 Sb. This may be due to a distortion of RuO6 octahedral, which is responsible of the increase in hole localization. The Hall effect anomalous decreases below T magnetic which may be explained within a simple two-band model by a transition from localized to more itinerant behavior in the RuO2 layer at Tmagnetic. The behavior of magnetic susceptibility is caused by an antisymmetric exchange coupling of the Dzyaloshinsky-Morya type between neighboring Ru moments.

AB - Ru1-xSbxSr2(Eu0.7Ce 0.3)2Cu2O10-δ systems were prepared by conventional solid state reaction method. The structural analysis was investigated using X-ray diffraction. Electrical resistivity, Hall effect and magnetic susceptibility measurements on Ru:1222 doped with Sb are presented, together with results in the temperature range 5-300 K. Transition temperature decreases from 43 K for x = 0.00 to 20 K for x = 0.06 Sb. This may be due to a distortion of RuO6 octahedral, which is responsible of the increase in hole localization. The Hall effect anomalous decreases below T magnetic which may be explained within a simple two-band model by a transition from localized to more itinerant behavior in the RuO2 layer at Tmagnetic. The behavior of magnetic susceptibility is caused by an antisymmetric exchange coupling of the Dzyaloshinsky-Morya type between neighboring Ru moments.

KW - Resistivity

KW - Susceptibility

KW - X-ray

UR - http://www.scopus.com/inward/record.url?scp=24344435609&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=24344435609&partnerID=8YFLogxK

U2 - 10.1142/S0217979205032127

DO - 10.1142/S0217979205032127

M3 - Article

AN - SCOPUS:24344435609

SN - 0217-9792

VL - 19

SP - 3511

EP - 3517

JO - International Journal of Modern Physics B

JF - International Journal of Modern Physics B

IS - 22

ER -