Synthesis and electron field emission properties of nanodiamond films

Y. C. Lee, S. J. Lin, C. T. Chia, H. F. Cheng, I. N. Lin

Research output: Contribution to journalConference article

21 Citations (Scopus)

Abstract

Effects of CH4/H2 ratio and bias voltage of the microwave plasma-enhanced chemical vapor deposition (MPE-CVD) process on the nucleation behavior and associated characteristics of nanodiamonds were investigated, While the scanning electron microscopy (SEM) microstructure and Raman crystal structure of the films insignificantly vary with CH 4/H2 ratio and bias voltage, electron field emission properties of the materials markedly change with these deposition parameters. The predominating factor modifying the electron field emission properties of the nanodiamond films is presumed to be the increase in the proportion of sp2-bonded grain boundaries when the grain size of the nanodiamond films decreases. Between these two major factors, the bias voltage shows more prominent effects on modifying the granular structure of the nanodiamonds than the CH4/H2 ratio does. The best electron field emission properties attainable are Je=500 μA/cm2 at 20 V/μm and E0=8.5 V/μm.

Original languageEnglish
Pages (from-to)2100-2104
Number of pages5
JournalDiamond and Related Materials
Volume13
Issue number11-12
DOIs
Publication statusPublished - 2004 Nov 1
EventProceedings of the 9th International Conference on New Diamond - Tokyo, Japan
Duration: 2004 Mar 262004 Mar 29

Keywords

  • BEG
  • BEN
  • Electron field emission
  • Nanodiamond

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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