Synthesis and characterization of core-shell GaP@GaN and GaN@GaP nanowires

Hung Min Lin; Yong Lin Chen; Jian Yang; Yao Chung Liu; Kai Min Yin; Ji Jung Kai; Fu Rong Chen; Li Chyong Chen; Yang Fang Chen; Chia Chun Chen

doi:10.1021/nl0340125

Synthesis and characterization of core-shell GaP@GaN and GaN@GaP nanowires

Hung Min Lin
, Yong Lin Chen
, Jian Yang
, Yao Chung Liu
, Kai Min Yin
, Ji Jung Kai
, Fu Rong Chen
, Li Chyong Chen
, Yang Fang Chen
, Chia Chun Chen^*

^*Corresponding author for this work

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

142 Citations (Scopus)

Abstract

A convenient thermal CVD route to core-shell GaP@GaN and GaN@GaP nanowires is developed. The structural analyses indicate that the nanowires exhibit a two-layer and wirelike structure. High-resolution transmission electron microscopy (HRTEM) images reveal misfit dislocation loops at the interface of the nanowires. Unusual temperature dependences of the photoluminescence (PL) intensity of GaP@GaN nanowires are observed, and they are interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. In the Raman spectra of GaN@GaP nanowires, an unexpected peak at 386 cm^-1 is found and assigned to a surface phonon mode.

Original language	English
Pages (from-to)	537-541
Number of pages	5
Journal	Nano Letters
Volume	3
Issue number	4
DOIs	https://doi.org/10.1021/nl0340125
Publication status	Published - 2003 Apr 1

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Condensed Matter Physics
Mechanical Engineering

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10.1021/nl0340125

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title = "Synthesis and characterization of core-shell GaP@GaN and GaN@GaP nanowires",

abstract = "A convenient thermal CVD route to core-shell GaP@GaN and GaN@GaP nanowires is developed. The structural analyses indicate that the nanowires exhibit a two-layer and wirelike structure. High-resolution transmission electron microscopy (HRTEM) images reveal misfit dislocation loops at the interface of the nanowires. Unusual temperature dependences of the photoluminescence (PL) intensity of GaP@GaN nanowires are observed, and they are interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. In the Raman spectra of GaN@GaP nanowires, an unexpected peak at 386 cm-1 is found and assigned to a surface phonon mode.",

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TY - JOUR

T1 - Synthesis and characterization of core-shell GaP@GaN and GaN@GaP nanowires

AU - Lin, Hung Min

AU - Chen, Yong Lin

AU - Yang, Jian

AU - Liu, Yao Chung

AU - Yin, Kai Min

AU - Kai, Ji Jung

AU - Chen, Fu Rong

AU - Chen, Li Chyong

AU - Chen, Yang Fang

AU - Chen, Chia Chun

PY - 2003/4/1

Y1 - 2003/4/1

N2 - A convenient thermal CVD route to core-shell GaP@GaN and GaN@GaP nanowires is developed. The structural analyses indicate that the nanowires exhibit a two-layer and wirelike structure. High-resolution transmission electron microscopy (HRTEM) images reveal misfit dislocation loops at the interface of the nanowires. Unusual temperature dependences of the photoluminescence (PL) intensity of GaP@GaN nanowires are observed, and they are interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. In the Raman spectra of GaN@GaP nanowires, an unexpected peak at 386 cm-1 is found and assigned to a surface phonon mode.

AB - A convenient thermal CVD route to core-shell GaP@GaN and GaN@GaP nanowires is developed. The structural analyses indicate that the nanowires exhibit a two-layer and wirelike structure. High-resolution transmission electron microscopy (HRTEM) images reveal misfit dislocation loops at the interface of the nanowires. Unusual temperature dependences of the photoluminescence (PL) intensity of GaP@GaN nanowires are observed, and they are interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. In the Raman spectra of GaN@GaP nanowires, an unexpected peak at 386 cm-1 is found and assigned to a surface phonon mode.

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DO - 10.1021/nl0340125

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SN - 1530-6984

VL - 3

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EP - 541

JO - Nano Letters

JF - Nano Letters

IS - 4

ER -

Synthesis and characterization of core-shell GaP@GaN and GaN@GaP nanowires

Abstract

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