Synthesis and characterization of core-shell GaP@GaN and GaN@GaP nanowires

Hung Min Lin; Yong Lin Chen; Jian Yang; Yao Chung Liu; Kai Min Yin; Ji Jung Kai; Fu Rong Chen; Li Chyong Chen; Yang Fang Chen; Chia Chun Chen

doi:10.1021/nl0340125

Synthesis and characterization of core-shell GaP@GaN and GaN@GaP nanowires

Hung Min Lin, Yong Lin Chen, Jian Yang, Yao Chung Liu, Kai Min Yin, Ji Jung Kai, Fu Rong Chen, Li Chyong Chen, Yang Fang Chen, Chia Chun Chen^*

^*Corresponding author for this work

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

141 Citations (Scopus)

Abstract

A convenient thermal CVD route to core-shell GaP@GaN and GaN@GaP nanowires is developed. The structural analyses indicate that the nanowires exhibit a two-layer and wirelike structure. High-resolution transmission electron microscopy (HRTEM) images reveal misfit dislocation loops at the interface of the nanowires. Unusual temperature dependences of the photoluminescence (PL) intensity of GaP@GaN nanowires are observed, and they are interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. In the Raman spectra of GaN@GaP nanowires, an unexpected peak at 386 cm^-1 is found and assigned to a surface phonon mode.

Original language	English
Pages (from-to)	537-541
Number of pages	5
Journal	Nano Letters
Volume	3
Issue number	4
DOIs	https://doi.org/10.1021/nl0340125
Publication status	Published - 2003 Apr 1

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Condensed Matter Physics
Mechanical Engineering

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title = "Synthesis and characterization of core-shell GaP@GaN and GaN@GaP nanowires",

abstract = "A convenient thermal CVD route to core-shell GaP@GaN and GaN@GaP nanowires is developed. The structural analyses indicate that the nanowires exhibit a two-layer and wirelike structure. High-resolution transmission electron microscopy (HRTEM) images reveal misfit dislocation loops at the interface of the nanowires. Unusual temperature dependences of the photoluminescence (PL) intensity of GaP@GaN nanowires are observed, and they are interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. In the Raman spectra of GaN@GaP nanowires, an unexpected peak at 386 cm-1 is found and assigned to a surface phonon mode.",

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T1 - Synthesis and characterization of core-shell GaP@GaN and GaN@GaP nanowires

AU - Lin, Hung Min

AU - Chen, Yong Lin

AU - Yang, Jian

AU - Liu, Yao Chung

AU - Yin, Kai Min

AU - Kai, Ji Jung

AU - Chen, Fu Rong

AU - Chen, Li Chyong

AU - Chen, Yang Fang

AU - Chen, Chia Chun

PY - 2003/4/1

Y1 - 2003/4/1

N2 - A convenient thermal CVD route to core-shell GaP@GaN and GaN@GaP nanowires is developed. The structural analyses indicate that the nanowires exhibit a two-layer and wirelike structure. High-resolution transmission electron microscopy (HRTEM) images reveal misfit dislocation loops at the interface of the nanowires. Unusual temperature dependences of the photoluminescence (PL) intensity of GaP@GaN nanowires are observed, and they are interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. In the Raman spectra of GaN@GaP nanowires, an unexpected peak at 386 cm-1 is found and assigned to a surface phonon mode.

AB - A convenient thermal CVD route to core-shell GaP@GaN and GaN@GaP nanowires is developed. The structural analyses indicate that the nanowires exhibit a two-layer and wirelike structure. High-resolution transmission electron microscopy (HRTEM) images reveal misfit dislocation loops at the interface of the nanowires. Unusual temperature dependences of the photoluminescence (PL) intensity of GaP@GaN nanowires are observed, and they are interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. In the Raman spectra of GaN@GaP nanowires, an unexpected peak at 386 cm-1 is found and assigned to a surface phonon mode.

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Synthesis and characterization of core-shell GaP@GaN and GaN@GaP nanowires

Abstract

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