Synthesis and characterization of core-shell GaP@GaN and GaN@GaP nanowires

Hung Min Lin, Yong Lin Chen, Jian Yang, Yao Chung Liu, Kai Min Yin, Ji Jung Kai, Fu Rong Chen, Li Chyong Chen, Yang Fang Chen, Chia Chun Chen

Research output: Contribution to journalArticle

134 Citations (Scopus)

Abstract

A convenient thermal CVD route to core-shell GaP@GaN and GaN@GaP nanowires is developed. The structural analyses indicate that the nanowires exhibit a two-layer and wirelike structure. High-resolution transmission electron microscopy (HRTEM) images reveal misfit dislocation loops at the interface of the nanowires. Unusual temperature dependences of the photoluminescence (PL) intensity of GaP@GaN nanowires are observed, and they are interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. In the Raman spectra of GaN@GaP nanowires, an unexpected peak at 386 cm-1 is found and assigned to a surface phonon mode.

Original languageEnglish
Pages (from-to)537-541
Number of pages5
JournalNano Letters
Volume3
Issue number4
DOIs
Publication statusPublished - 2003 Apr 1

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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    Lin, H. M., Chen, Y. L., Yang, J., Liu, Y. C., Yin, K. M., Kai, J. J., Chen, F. R., Chen, L. C., Chen, Y. F., & Chen, C. C. (2003). Synthesis and characterization of core-shell GaP@GaN and GaN@GaP nanowires. Nano Letters, 3(4), 537-541. https://doi.org/10.1021/nl0340125