Synchrotron radiation X-ray diffraction and X-ray photoelectron spectroscopy investigation on Si-based structures for sub-micron Si-IC applications

Zhe Chuan Feng, Li Chi Cheng, Chu Wan Huang, Ying Lang Wang, T. R. Yang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Synchrotron radiation X-ray diffraction and X-ray photoelectron spectroscopy techniques have been employed for the investigation on Si-based layer structures for sub-micron Si-IC Applications. The high energy synchrotron radiation light sources have produced plenty of X-ray lines with high index diffraction and strong X-ray photoelectron emissions. The useful information will increase our understanding of these materials which are applied extensively to the semiconductor industry.

Original languageEnglish
Title of host publicationICSE 2006
Subtitle of host publication2006 IEEE International Conference on Semiconductor Electronics, Proceedings
Pages981-984
Number of pages4
DOIs
Publication statusPublished - 2006 Dec 1
Event2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 - Kuala Lumpur, Malaysia
Duration: 2006 Nov 292006 Dec 1

Publication series

NameIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Other

Other2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006
CountryMalaysia
CityKuala Lumpur
Period06/11/2906/12/1

Fingerprint

Synchrotron radiation
X ray photoelectron spectroscopy
X ray diffraction
X rays
Photoelectrons
Light sources
Diffraction
Semiconductor materials
Industry

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Feng, Z. C., Cheng, L. C., Huang, C. W., Wang, Y. L., & Yang, T. R. (2006). Synchrotron radiation X-ray diffraction and X-ray photoelectron spectroscopy investigation on Si-based structures for sub-micron Si-IC applications. In ICSE 2006: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings (pp. 981-984). [4266768] (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE). https://doi.org/10.1109/SMELEC.2006.380785

Synchrotron radiation X-ray diffraction and X-ray photoelectron spectroscopy investigation on Si-based structures for sub-micron Si-IC applications. / Feng, Zhe Chuan; Cheng, Li Chi; Huang, Chu Wan; Wang, Ying Lang; Yang, T. R.

ICSE 2006: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings. 2006. p. 981-984 4266768 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Feng, ZC, Cheng, LC, Huang, CW, Wang, YL & Yang, TR 2006, Synchrotron radiation X-ray diffraction and X-ray photoelectron spectroscopy investigation on Si-based structures for sub-micron Si-IC applications. in ICSE 2006: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings., 4266768, IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, pp. 981-984, 2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006, Kuala Lumpur, Malaysia, 06/11/29. https://doi.org/10.1109/SMELEC.2006.380785
Feng ZC, Cheng LC, Huang CW, Wang YL, Yang TR. Synchrotron radiation X-ray diffraction and X-ray photoelectron spectroscopy investigation on Si-based structures for sub-micron Si-IC applications. In ICSE 2006: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings. 2006. p. 981-984. 4266768. (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE). https://doi.org/10.1109/SMELEC.2006.380785
Feng, Zhe Chuan ; Cheng, Li Chi ; Huang, Chu Wan ; Wang, Ying Lang ; Yang, T. R. / Synchrotron radiation X-ray diffraction and X-ray photoelectron spectroscopy investigation on Si-based structures for sub-micron Si-IC applications. ICSE 2006: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings. 2006. pp. 981-984 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE).
@inproceedings{0738feaa75ac42709ed8e04161af687c,
title = "Synchrotron radiation X-ray diffraction and X-ray photoelectron spectroscopy investigation on Si-based structures for sub-micron Si-IC applications",
abstract = "Synchrotron radiation X-ray diffraction and X-ray photoelectron spectroscopy techniques have been employed for the investigation on Si-based layer structures for sub-micron Si-IC Applications. The high energy synchrotron radiation light sources have produced plenty of X-ray lines with high index diffraction and strong X-ray photoelectron emissions. The useful information will increase our understanding of these materials which are applied extensively to the semiconductor industry.",
author = "Feng, {Zhe Chuan} and Cheng, {Li Chi} and Huang, {Chu Wan} and Wang, {Ying Lang} and Yang, {T. R.}",
year = "2006",
month = "12",
day = "1",
doi = "10.1109/SMELEC.2006.380785",
language = "English",
isbn = "0780397312",
series = "IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE",
pages = "981--984",
booktitle = "ICSE 2006",

}

TY - GEN

T1 - Synchrotron radiation X-ray diffraction and X-ray photoelectron spectroscopy investigation on Si-based structures for sub-micron Si-IC applications

AU - Feng, Zhe Chuan

AU - Cheng, Li Chi

AU - Huang, Chu Wan

AU - Wang, Ying Lang

AU - Yang, T. R.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - Synchrotron radiation X-ray diffraction and X-ray photoelectron spectroscopy techniques have been employed for the investigation on Si-based layer structures for sub-micron Si-IC Applications. The high energy synchrotron radiation light sources have produced plenty of X-ray lines with high index diffraction and strong X-ray photoelectron emissions. The useful information will increase our understanding of these materials which are applied extensively to the semiconductor industry.

AB - Synchrotron radiation X-ray diffraction and X-ray photoelectron spectroscopy techniques have been employed for the investigation on Si-based layer structures for sub-micron Si-IC Applications. The high energy synchrotron radiation light sources have produced plenty of X-ray lines with high index diffraction and strong X-ray photoelectron emissions. The useful information will increase our understanding of these materials which are applied extensively to the semiconductor industry.

UR - http://www.scopus.com/inward/record.url?scp=35148856260&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=35148856260&partnerID=8YFLogxK

U2 - 10.1109/SMELEC.2006.380785

DO - 10.1109/SMELEC.2006.380785

M3 - Conference contribution

AN - SCOPUS:35148856260

SN - 0780397312

SN - 9780780397316

T3 - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

SP - 981

EP - 984

BT - ICSE 2006

ER -