Synchrotron radiation X-ray diffraction and X-ray photoelectron spectroscopy investigation on Si-based structures for sub-micron Si-IC applications

Zhe Chuan Feng, Li Chi Cheng, Chu Wan Huang, Ying Lang Wang, T. R. Yang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Synchrotron radiation X-ray diffraction and X-ray photoelectron spectroscopy techniques have been employed for the investigation on Si-based layer structures for sub-micron Si-IC Applications. The high energy synchrotron radiation light sources have produced plenty of X-ray lines with high index diffraction and strong X-ray photoelectron emissions. The useful information will increase our understanding of these materials which are applied extensively to the semiconductor industry.

Original languageEnglish
Title of host publicationICSE 2006
Subtitle of host publication2006 IEEE International Conference on Semiconductor Electronics, Proceedings
Pages981-984
Number of pages4
DOIs
Publication statusPublished - 2006 Dec 1
Event2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 - Kuala Lumpur, Malaysia
Duration: 2006 Nov 292006 Dec 1

Publication series

NameIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Other

Other2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006
CountryMalaysia
CityKuala Lumpur
Period06/11/2906/12/1

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Feng, Z. C., Cheng, L. C., Huang, C. W., Wang, Y. L., & Yang, T. R. (2006). Synchrotron radiation X-ray diffraction and X-ray photoelectron spectroscopy investigation on Si-based structures for sub-micron Si-IC applications. In ICSE 2006: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings (pp. 981-984). [4266768] (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE). https://doi.org/10.1109/SMELEC.2006.380785