Surface etching of InP(100) by chlorine

Wei Hsiu Hung; Jyh Tsung Hsieh; Huey Liang Hwang; Hsin Yen Hwang; Che Chen Chang

doi:10.1016/S0039-6028(98)00666-9

Surface etching of InP(100) by chlorine

Wei Hsiu Hung^*, Jyh Tsung Hsieh, Huey Liang Hwang, Hsin Yen Hwang, Che Chen Chang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

The cleaning and etching of the InP(100) surface by chlorine gas is investigated using synchrotron-radiation photoemission spectroscopy. A clean InP surface with a 4 × 2 configuration is obtained by ion sputtering or chlorine etching, followed by annealing to 650 K. The clean surface obtained by chlorine etching and annealing is indium-rich with the surface indium atoms showing metallic characterics. The chemisorption of chlorine leads to the formation of various InCl_x (x = 1-3) and PC1 species on the InP surface at 110 K and their corresponding chemical shifts are assigned. The chlorination of the InP surface causes surface band bending by about 0.36 eV at the saturation coverage. Argon-ion sputtering enhances the surface reactivity so that the sputtered surface can be chlorinated to a higher extent than the clean surface.

Original language	English
Pages (from-to)	46-54
Number of pages	9
Journal	Surface Science
Volume	418
Issue number	1
DOIs	https://doi.org/10.1016/S0039-6028(98)00666-9
Publication status	Published - 1998 Nov 27
Externally published	Yes

Keywords

Chlorine
Etching
InP
Synchrotron-radiation photoelectron spectroscopy

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/S0039-6028(98)00666-9

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title = "Surface etching of InP(100) by chlorine",

abstract = "The cleaning and etching of the InP(100) surface by chlorine gas is investigated using synchrotron-radiation photoemission spectroscopy. A clean InP surface with a 4 × 2 configuration is obtained by ion sputtering or chlorine etching, followed by annealing to 650 K. The clean surface obtained by chlorine etching and annealing is indium-rich with the surface indium atoms showing metallic characterics. The chemisorption of chlorine leads to the formation of various InClx (x = 1-3) and PC1 species on the InP surface at 110 K and their corresponding chemical shifts are assigned. The chlorination of the InP surface causes surface band bending by about 0.36 eV at the saturation coverage. Argon-ion sputtering enhances the surface reactivity so that the sputtered surface can be chlorinated to a higher extent than the clean surface.",

keywords = "Chlorine, Etching, InP, Synchrotron-radiation photoelectron spectroscopy",

author = "Hung, {Wei Hsiu} and Hsieh, {Jyh Tsung} and Hwang, {Huey Liang} and Hwang, {Hsin Yen} and Chang, {Che Chen}",

note = "Funding Information: This work was supported by SRRC and National Science Council under Grant No. NSC873-2613-M-213-016. We also express our appreciation to the beamline group at SRRC for their instrumental support.",

year = "1998",

month = nov,

day = "27",

doi = "10.1016/S0039-6028(98)00666-9",

language = "English",

volume = "418",

pages = "46--54",

journal = "Surface Science",

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T1 - Surface etching of InP(100) by chlorine

AU - Hung, Wei Hsiu

AU - Hsieh, Jyh Tsung

AU - Hwang, Huey Liang

AU - Hwang, Hsin Yen

AU - Chang, Che Chen

N1 - Funding Information: This work was supported by SRRC and National Science Council under Grant No. NSC873-2613-M-213-016. We also express our appreciation to the beamline group at SRRC for their instrumental support.

PY - 1998/11/27

Y1 - 1998/11/27

N2 - The cleaning and etching of the InP(100) surface by chlorine gas is investigated using synchrotron-radiation photoemission spectroscopy. A clean InP surface with a 4 × 2 configuration is obtained by ion sputtering or chlorine etching, followed by annealing to 650 K. The clean surface obtained by chlorine etching and annealing is indium-rich with the surface indium atoms showing metallic characterics. The chemisorption of chlorine leads to the formation of various InClx (x = 1-3) and PC1 species on the InP surface at 110 K and their corresponding chemical shifts are assigned. The chlorination of the InP surface causes surface band bending by about 0.36 eV at the saturation coverage. Argon-ion sputtering enhances the surface reactivity so that the sputtered surface can be chlorinated to a higher extent than the clean surface.

AB - The cleaning and etching of the InP(100) surface by chlorine gas is investigated using synchrotron-radiation photoemission spectroscopy. A clean InP surface with a 4 × 2 configuration is obtained by ion sputtering or chlorine etching, followed by annealing to 650 K. The clean surface obtained by chlorine etching and annealing is indium-rich with the surface indium atoms showing metallic characterics. The chemisorption of chlorine leads to the formation of various InClx (x = 1-3) and PC1 species on the InP surface at 110 K and their corresponding chemical shifts are assigned. The chlorination of the InP surface causes surface band bending by about 0.36 eV at the saturation coverage. Argon-ion sputtering enhances the surface reactivity so that the sputtered surface can be chlorinated to a higher extent than the clean surface.

KW - Chlorine

KW - Etching

KW - InP

KW - Synchrotron-radiation photoelectron spectroscopy

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U2 - 10.1016/S0039-6028(98)00666-9

DO - 10.1016/S0039-6028(98)00666-9

M3 - Article

AN - SCOPUS:0032202719

SN - 0039-6028

VL - 418

SP - 46

EP - 54

JO - Surface Science

JF - Surface Science

IS - 1

ER -

Surface etching of InP(100) by chlorine

Abstract

Keywords

ASJC Scopus subject areas

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