Surface etching of InP(100) by chlorine

Wei Hsiu Hung, Jyh Tsung Hsieh, Huey Liang Hwang, Hsin Yen Hwang, Che Chen Chang

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

The cleaning and etching of the InP(100) surface by chlorine gas is investigated using synchrotron-radiation photoemission spectroscopy. A clean InP surface with a 4 × 2 configuration is obtained by ion sputtering or chlorine etching, followed by annealing to 650 K. The clean surface obtained by chlorine etching and annealing is indium-rich with the surface indium atoms showing metallic characterics. The chemisorption of chlorine leads to the formation of various InClx (x = 1-3) and PC1 species on the InP surface at 110 K and their corresponding chemical shifts are assigned. The chlorination of the InP surface causes surface band bending by about 0.36 eV at the saturation coverage. Argon-ion sputtering enhances the surface reactivity so that the sputtered surface can be chlorinated to a higher extent than the clean surface.

Original languageEnglish
Pages (from-to)46-54
Number of pages9
JournalSurface Science
Volume418
Issue number1
DOIs
Publication statusPublished - 1998 Nov 27

Fingerprint

Chlorine
chlorine
Etching
etching
Indium
Sputtering
indium
sputtering
Annealing
Ions
chlorination
annealing
Argon
Chlorination
Chemical shift
Photoelectron spectroscopy
Chemisorption
Synchrotron radiation
chemisorption
cleaning

Keywords

  • Chlorine
  • Etching
  • InP
  • Synchrotron-radiation photoelectron spectroscopy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Hung, W. H., Hsieh, J. T., Hwang, H. L., Hwang, H. Y., & Chang, C. C. (1998). Surface etching of InP(100) by chlorine. Surface Science, 418(1), 46-54. https://doi.org/10.1016/S0039-6028(98)00666-9

Surface etching of InP(100) by chlorine. / Hung, Wei Hsiu; Hsieh, Jyh Tsung; Hwang, Huey Liang; Hwang, Hsin Yen; Chang, Che Chen.

In: Surface Science, Vol. 418, No. 1, 27.11.1998, p. 46-54.

Research output: Contribution to journalArticle

Hung, WH, Hsieh, JT, Hwang, HL, Hwang, HY & Chang, CC 1998, 'Surface etching of InP(100) by chlorine', Surface Science, vol. 418, no. 1, pp. 46-54. https://doi.org/10.1016/S0039-6028(98)00666-9
Hung WH, Hsieh JT, Hwang HL, Hwang HY, Chang CC. Surface etching of InP(100) by chlorine. Surface Science. 1998 Nov 27;418(1):46-54. https://doi.org/10.1016/S0039-6028(98)00666-9
Hung, Wei Hsiu ; Hsieh, Jyh Tsung ; Hwang, Huey Liang ; Hwang, Hsin Yen ; Chang, Che Chen. / Surface etching of InP(100) by chlorine. In: Surface Science. 1998 ; Vol. 418, No. 1. pp. 46-54.
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