Surface and optical properties of AlGaInP films grown on GaAs by metalorganic chemical vapor deposition

Z. C. Feng; H. C. Lin; J. Zhao; T. R. Yang; I. Ferguson

doi:10.1016/j.tsf.2005.07.070

Surface and optical properties of AlGaInP films grown on GaAs by metalorganic chemical vapor deposition

Z. C. Feng^*, H. C. Lin, J. Zhao, T. R. Yang, I. Ferguson

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

14 Citations (Scopus)

Abstract

Two sets of (Al_xGa_1-x)_0.5In _0.5P films were grown on lattice-matched GaAs by low pressure metalorganic chemical vapor deposition under different conditions and studied by Nomarski microscopy (NM), atomic force microscopy (AFM), photoluminescence (PL) and Raman scattering. NM and AFM images show cross-hatch patterns, related to dislocations and lattice mismatch, from one set of samples, but none from another set of films. Comparative PL and Raman measurements and analyses indicated the correlation between surface and optical properties. The degree of variations in compositions and film quality with the growth conditions was found from the spectral analyses. Raman spectral features are more sensitive to the sample growth parameter variations. The line shape analysis of line width, integrated intensity ratio and spatial correlation model fitting leads to information about the order of the sample crystalline quality. The optimum growth conditions have been obtained from our comprehensive analyses.

Original language	English
Pages (from-to)	167-173
Number of pages	7
Journal	Thin Solid Films
Volume	498
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.07.070
Publication status	Published - 2006 Mar 1
Event	Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD - Duration: 2004 Nov 12 → 2004 Nov 14

Keywords

AlGaInP
Atomic force microscopy (AFM)
Metalorganic chemical vapor deposition (MOCVD)
Nomarski microscopy
Photoluminescence
Raman scattering

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2005.07.070

Cite this

@article{09f4afa99f92486c88039702527a616a,

title = "Surface and optical properties of AlGaInP films grown on GaAs by metalorganic chemical vapor deposition",

abstract = "Two sets of (AlxGa1-x)0.5In 0.5P films were grown on lattice-matched GaAs by low pressure metalorganic chemical vapor deposition under different conditions and studied by Nomarski microscopy (NM), atomic force microscopy (AFM), photoluminescence (PL) and Raman scattering. NM and AFM images show cross-hatch patterns, related to dislocations and lattice mismatch, from one set of samples, but none from another set of films. Comparative PL and Raman measurements and analyses indicated the correlation between surface and optical properties. The degree of variations in compositions and film quality with the growth conditions was found from the spectral analyses. Raman spectral features are more sensitive to the sample growth parameter variations. The line shape analysis of line width, integrated intensity ratio and spatial correlation model fitting leads to information about the order of the sample crystalline quality. The optimum growth conditions have been obtained from our comprehensive analyses.",

keywords = "AlGaInP, Atomic force microscopy (AFM), Metalorganic chemical vapor deposition (MOCVD), Nomarski microscopy, Photoluminescence, Raman scattering",

author = "Feng, {Z. C.} and Lin, {H. C.} and J. Zhao and Yang, {T. R.} and I. Ferguson",

note = "Funding Information: We acknowledge the help and support from Drs. N. Schumaker, R.A. Stall, E. Armour, Z.Z. Wan and F.H. Pollak. The work at National Taiwan University was supported by funds from National Science Council of Republic of China, NSC 93-2218-E-002-011 and 93-2215-E-002-035.; Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD ; Conference date: 12-11-2004 Through 14-11-2004",

year = "2006",

month = mar,

day = "1",

doi = "10.1016/j.tsf.2005.07.070",

language = "English",

volume = "498",

pages = "167--173",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Surface and optical properties of AlGaInP films grown on GaAs by metalorganic chemical vapor deposition

AU - Feng, Z. C.

AU - Lin, H. C.

AU - Zhao, J.

AU - Yang, T. R.

AU - Ferguson, I.

N1 - Funding Information: We acknowledge the help and support from Drs. N. Schumaker, R.A. Stall, E. Armour, Z.Z. Wan and F.H. Pollak. The work at National Taiwan University was supported by funds from National Science Council of Republic of China, NSC 93-2218-E-002-011 and 93-2215-E-002-035.

PY - 2006/3/1

Y1 - 2006/3/1

N2 - Two sets of (AlxGa1-x)0.5In 0.5P films were grown on lattice-matched GaAs by low pressure metalorganic chemical vapor deposition under different conditions and studied by Nomarski microscopy (NM), atomic force microscopy (AFM), photoluminescence (PL) and Raman scattering. NM and AFM images show cross-hatch patterns, related to dislocations and lattice mismatch, from one set of samples, but none from another set of films. Comparative PL and Raman measurements and analyses indicated the correlation between surface and optical properties. The degree of variations in compositions and film quality with the growth conditions was found from the spectral analyses. Raman spectral features are more sensitive to the sample growth parameter variations. The line shape analysis of line width, integrated intensity ratio and spatial correlation model fitting leads to information about the order of the sample crystalline quality. The optimum growth conditions have been obtained from our comprehensive analyses.

AB - Two sets of (AlxGa1-x)0.5In 0.5P films were grown on lattice-matched GaAs by low pressure metalorganic chemical vapor deposition under different conditions and studied by Nomarski microscopy (NM), atomic force microscopy (AFM), photoluminescence (PL) and Raman scattering. NM and AFM images show cross-hatch patterns, related to dislocations and lattice mismatch, from one set of samples, but none from another set of films. Comparative PL and Raman measurements and analyses indicated the correlation between surface and optical properties. The degree of variations in compositions and film quality with the growth conditions was found from the spectral analyses. Raman spectral features are more sensitive to the sample growth parameter variations. The line shape analysis of line width, integrated intensity ratio and spatial correlation model fitting leads to information about the order of the sample crystalline quality. The optimum growth conditions have been obtained from our comprehensive analyses.

KW - AlGaInP

KW - Atomic force microscopy (AFM)

KW - Metalorganic chemical vapor deposition (MOCVD)

KW - Nomarski microscopy

KW - Photoluminescence

KW - Raman scattering

UR - http://www.scopus.com/inward/record.url?scp=30944438472&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=30944438472&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2005.07.070

DO - 10.1016/j.tsf.2005.07.070

M3 - Conference article

AN - SCOPUS:30944438472

SN - 0040-6090

VL - 498

SP - 167

EP - 173

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

T2 - Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD

Y2 - 12 November 2004 through 14 November 2004

ER -

Surface and optical properties of AlGaInP films grown on GaAs by metalorganic chemical vapor deposition

Abstract

Keywords

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