Surface and optical properties of AlGaInP films grown on GaAs by metalorganic chemical vapor deposition

Z. C. Feng*, H. C. Lin, J. Zhao, T. R. Yang, I. Ferguson

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

14 Citations (Scopus)


Two sets of (AlxGa1-x)0.5In 0.5P films were grown on lattice-matched GaAs by low pressure metalorganic chemical vapor deposition under different conditions and studied by Nomarski microscopy (NM), atomic force microscopy (AFM), photoluminescence (PL) and Raman scattering. NM and AFM images show cross-hatch patterns, related to dislocations and lattice mismatch, from one set of samples, but none from another set of films. Comparative PL and Raman measurements and analyses indicated the correlation between surface and optical properties. The degree of variations in compositions and film quality with the growth conditions was found from the spectral analyses. Raman spectral features are more sensitive to the sample growth parameter variations. The line shape analysis of line width, integrated intensity ratio and spatial correlation model fitting leads to information about the order of the sample crystalline quality. The optimum growth conditions have been obtained from our comprehensive analyses.

Original languageEnglish
Pages (from-to)167-173
Number of pages7
JournalThin Solid Films
Issue number1-2
Publication statusPublished - 2006 Mar 1
EventProceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD -
Duration: 2004 Nov 122004 Nov 14


  • AlGaInP
  • Atomic force microscopy (AFM)
  • Metalorganic chemical vapor deposition (MOCVD)
  • Nomarski microscopy
  • Photoluminescence
  • Raman scattering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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