Suppression of efficiency-droop effect of InGaN-based LEDs by using localized high indium quantum wells

Yung Chi Yao, Yi Ching Chen, Ya Ju Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Staggered quantum wells (QWs) structures are numerically studied to reduce the influence of the efficiency-droop effect on the InGaN-based green light-emitting diode (LED). The location of high In-content InGaN layer in staggered QWs considerably affects the distribution of the electrostatic-field of an LED. When the high In-content InGaN layer is suitably located in the staggered QWs, the localized electrostatic-field with high intensity increases the transport efficiency of injected holes across the active region, improving the overall radiative efficiency of the LED. Most importantly, as accumulation of injected holes in the last QW is relieved, the Auger recombination process is quenched, suppressing the efficiency-droop in the LED. Theoretically, the incorporation of the staggered InGaN QWs in the green LED (λ = 530nm) can ensure an extremely low efficiency droop of 11.3%.

Original languageEnglish
Title of host publicationLight-Emitting Diodes
Subtitle of host publicationMaterials, Devices, and Applications for Solid State Lighting XVI
DOIs
Publication statusPublished - 2012 Mar 5
EventLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI - San Francisco, CA, United States
Duration: 2012 Jan 242012 Jan 26

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8278
ISSN (Print)0277-786X

Other

OtherLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI
CountryUnited States
CitySan Francisco, CA
Period12/1/2412/1/26

Fingerprint

InGaN
Indium
Quantum Well
Diode
Semiconductor quantum wells
Light emitting diodes
indium
light emitting diodes
retarding
quantum wells
Electrostatic Field
Electric fields
electric fields
Recombination

Keywords

  • Auger recombination
  • Shockley-Read-Hall
  • efficiency-droop
  • light-emitting diode

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Yao, Y. C., Chen, Y. C., & Lee, Y. J. (2012). Suppression of efficiency-droop effect of InGaN-based LEDs by using localized high indium quantum wells. In Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI [82781T] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8278). https://doi.org/10.1117/12.917953

Suppression of efficiency-droop effect of InGaN-based LEDs by using localized high indium quantum wells. / Yao, Yung Chi; Chen, Yi Ching; Lee, Ya Ju.

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI. 2012. 82781T (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8278).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yao, YC, Chen, YC & Lee, YJ 2012, Suppression of efficiency-droop effect of InGaN-based LEDs by using localized high indium quantum wells. in Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI., 82781T, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8278, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI, San Francisco, CA, United States, 12/1/24. https://doi.org/10.1117/12.917953
Yao YC, Chen YC, Lee YJ. Suppression of efficiency-droop effect of InGaN-based LEDs by using localized high indium quantum wells. In Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI. 2012. 82781T. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.917953
Yao, Yung Chi ; Chen, Yi Ching ; Lee, Ya Ju. / Suppression of efficiency-droop effect of InGaN-based LEDs by using localized high indium quantum wells. Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI. 2012. (Proceedings of SPIE - The International Society for Optical Engineering).
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