Superlattice HfO2-ZrO2based Ferro-Stack HfZrO2FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 109cycles for Multibit NVM

C. Y. Liao; Z. F. Lou; C. Y. Lin; A. Senapati; R. Karmakar; K. Y. Hsiang; Z. X. Li; W. C. Ray; J. Y. Lee; P. H. Chen; F. S. Chang; H. H. Tseng; C. C. Wang; J. H. Tsai; Y. T. Tang; S. T. Chang; C. W. Liu; S. Maikap; M. H. Lee

doi:10.1109/IEDM45625.2022.10019369

Superlattice HfO₂-ZrO₂based Ferro-Stack HfZrO₂FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 10⁹cycles for Multibit NVM

C. Y. Liao
, Z. F. Lou
, C. Y. Lin
, A. Senapati
, R. Karmakar
, K. Y. Hsiang
, Z. X. Li
, W. C. Ray
, J. Y. Lee
, P. H. Chen
, F. S. Chang
, H. H. Tseng
, C. C. Wang
, J. H. Tsai
, Y. T. Tang
, S. T. Chang
, C. W. Liu
, S. Maikap^*
, M. H. Lee^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

17 Citations (Scopus)

Abstract

Superlattice (SL) HfO2-ZrO2 with physical thickness of 5 nm and low phase fraction ratio 0.101:1 of monoclinic-phase (m-phase) to orthorhombic-phase (o-phase) investigated by geometrical phase analysis (GPA) is demonstrated. The homogeneous and congruous of SL-HfZrO2 (HZO) with sufficient ferroelectric-domain is integrated as ferro-stack FeFETs for multibit NVM with low |VPG/ER| = 4 V, ultra-low error rate = 7.5×10-16, record high 2-bit endurance for 109 cycles, and stable data retention > 104 s. The device-to-device (D2D) variation of nanoscale 3D FeFETs is also improved with the proposed SL-HZO. The superlattice technique for FE-HZO is a promising concept with elevating the coherence of domain access due to high o-phase toward emerging memory applications.

Original language	English
Title of host publication	2022 International Electron Devices Meeting, IEDM 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	3661-3664
Number of pages	4
ISBN (Electronic)	9781665489591
DOIs	https://doi.org/10.1109/IEDM45625.2022.10019369
Publication status	Published - 2022
Event	2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States Duration: 2022 Dec 3 → 2022 Dec 7

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2022-December
ISSN (Print)	0163-1918

Conference

Conference	2022 International Electron Devices Meeting, IEDM 2022
Country/Territory	United States
City	San Francisco
Period	2022/12/03 → 2022/12/07

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM45625.2022.10019369

Cite this

Liao, C. Y., Lou, Z. F., Lin, C. Y., Senapati, A., Karmakar, R., Hsiang, K. Y., Li, Z. X., Ray, W. C., Lee, J. Y., Chen, P. H., Chang, F. S., Tseng, H. H., Wang, C. C., Tsai, J. H., Tang, Y. T., Chang, S. T., Liu, C. W., Maikap, S., & Lee, M. H. (2022). Superlattice HfO₂-ZrO₂based Ferro-Stack HfZrO₂FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 10⁹cycles for Multibit NVM. In 2022 International Electron Devices Meeting, IEDM 2022 (pp. 3661-3664). (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2022-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM45625.2022.10019369

Superlattice HfO₂-ZrO₂based Ferro-Stack HfZrO₂FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 10⁹cycles for Multibit NVM. / Liao, C. Y.; Lou, Z. F.; Lin, C. Y. et al.
2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 3661-3664 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2022-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liao, CY, Lou, ZF, Lin, CY, Senapati, A, Karmakar, R, Hsiang, KY, Li, ZX, Ray, WC, Lee, JY, Chen, PH, Chang, FS, Tseng, HH, Wang, CC, Tsai, JH, Tang, YT, Chang, ST, Liu, CW, Maikap, S & Lee, MH 2022, Superlattice HfO₂-ZrO₂based Ferro-Stack HfZrO₂FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 10⁹cycles for Multibit NVM. in 2022 International Electron Devices Meeting, IEDM 2022. Technical Digest - International Electron Devices Meeting, IEDM, vol. 2022-December, Institute of Electrical and Electronics Engineers Inc., pp. 3661-3664, 2022 International Electron Devices Meeting, IEDM 2022, San Francisco, United States, 2022/12/03. https://doi.org/10.1109/IEDM45625.2022.10019369

Liao CY, Lou ZF, Lin CY, Senapati A, Karmakar R, Hsiang KY et al. Superlattice HfO₂-ZrO₂based Ferro-Stack HfZrO₂FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 10⁹cycles for Multibit NVM. In 2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 3661-3664. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM45625.2022.10019369

Liao, C. Y. ; Lou, Z. F. ; Lin, C. Y. et al. / Superlattice HfO₂-ZrO₂based Ferro-Stack HfZrO₂FeFETs : Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 10⁹cycles for Multibit NVM. 2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc., 2022. pp. 3661-3664 (Technical Digest - International Electron Devices Meeting, IEDM).

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title = "Superlattice HfO2-ZrO2based Ferro-Stack HfZrO2FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 109cycles for Multibit NVM",

abstract = "Superlattice (SL) HfO2-ZrO2 with physical thickness of 5 nm and low phase fraction ratio 0.101:1 of monoclinic-phase (m-phase) to orthorhombic-phase (o-phase) investigated by geometrical phase analysis (GPA) is demonstrated. The homogeneous and congruous of SL-HfZrO2 (HZO) with sufficient ferroelectric-domain is integrated as ferro-stack FeFETs for multibit NVM with low |VPG/ER| = 4 V, ultra-low error rate = 7.5×10-16, record high 2-bit endurance for 109 cycles, and stable data retention > 104 s. The device-to-device (D2D) variation of nanoscale 3D FeFETs is also improved with the proposed SL-HZO. The superlattice technique for FE-HZO is a promising concept with elevating the coherence of domain access due to high o-phase toward emerging memory applications.",

author = "Liao, \{C. Y.\} and Lou, \{Z. F.\} and Lin, \{C. Y.\} and A. Senapati and R. Karmakar and Hsiang, \{K. Y.\} and Li, \{Z. X.\} and Ray, \{W. C.\} and Lee, \{J. Y.\} and Chen, \{P. H.\} and Chang, \{F. S.\} and Tseng, \{H. H.\} and Wang, \{C. C.\} and Tsai, \{J. H.\} and Tang, \{Y. T.\} and Chang, \{S. T.\} and Liu, \{C. W.\} and S. Maikap and Lee, \{M. H.\}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Electron Devices Meeting, IEDM 2022 ; Conference date: 03-12-2022 Through 07-12-2022",

year = "2022",

doi = "10.1109/IEDM45625.2022.10019369",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "3661--3664",

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AU - Hsiang, K. Y.

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AU - Ray, W. C.

AU - Lee, J. Y.

AU - Chen, P. H.

AU - Chang, F. S.

AU - Tseng, H. H.

AU - Wang, C. C.

AU - Tsai, J. H.

AU - Tang, Y. T.

AU - Chang, S. T.

AU - Liu, C. W.

AU - Maikap, S.

AU - Lee, M. H.

PY - 2022

Y1 - 2022

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AB - Superlattice (SL) HfO2-ZrO2 with physical thickness of 5 nm and low phase fraction ratio 0.101:1 of monoclinic-phase (m-phase) to orthorhombic-phase (o-phase) investigated by geometrical phase analysis (GPA) is demonstrated. The homogeneous and congruous of SL-HfZrO2 (HZO) with sufficient ferroelectric-domain is integrated as ferro-stack FeFETs for multibit NVM with low |VPG/ER| = 4 V, ultra-low error rate = 7.5×10-16, record high 2-bit endurance for 109 cycles, and stable data retention > 104 s. The device-to-device (D2D) variation of nanoscale 3D FeFETs is also improved with the proposed SL-HZO. The superlattice technique for FE-HZO is a promising concept with elevating the coherence of domain access due to high o-phase toward emerging memory applications.

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