Superlattice HfO2-ZrO2based Ferro-Stack HfZrO2FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 109cycles for Multibit NVM

C. Y. Liao, Z. F. Lou, C. Y. Lin, A. Senapati, R. Karmakar, K. Y. Hsiang, Z. X. Li, W. C. Ray, J. Y. Lee, P. H. Chen, F. S. Chang, H. H. Tseng, C. C. Wang, J. H. Tsai, Y. T. Tang, S. T. Chang, C. W. Liu, S. Maikap*, M. H. Lee*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Superlattice (SL) HfO2-ZrO2 with physical thickness of 5 nm and low phase fraction ratio 0.101:1 of monoclinic-phase (m-phase) to orthorhombic-phase (o-phase) investigated by geometrical phase analysis (GPA) is demonstrated. The homogeneous and congruous of SL-HfZrO2 (HZO) with sufficient ferroelectric-domain is integrated as ferro-stack FeFETs for multibit NVM with low |VPG/ER| = 4 V, ultra-low error rate = 7.5×10-16, record high 2-bit endurance for 109 cycles, and stable data retention > 104 s. The device-to-device (D2D) variation of nanoscale 3D FeFETs is also improved with the proposed SL-HZO. The superlattice technique for FE-HZO is a promising concept with elevating the coherence of domain access due to high o-phase toward emerging memory applications.

Original languageEnglish
Title of host publication2022 International Electron Devices Meeting, IEDM 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages3661-3664
Number of pages4
ISBN (Electronic)9781665489591
DOIs
Publication statusPublished - 2022
Event2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States
Duration: 2022 Dec 32022 Dec 7

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2022-December
ISSN (Print)0163-1918

Conference

Conference2022 International Electron Devices Meeting, IEDM 2022
Country/TerritoryUnited States
CitySan Francisco
Period2022/12/032022/12/07

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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