Superconductivity of MgB2 sputtered thin films with aluminium nitride buffer layers

G. Ilonca*, T. R. Yang, A. V. Pop, V. Toma, P. Balint, M. Bodea, D. Marconi, T. Jurcut

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


MgB2 thin films were deposited, at low temperature substrates, in situ, on a polished c-cut sapphire substrates, with the aluminium nitride (AlN) buffer layers, using the multiple-target sputtering system. The magnetoresistivities were measured using dc-4 terminal method in applied magnetic field up to 9 Tesla. The upper critical field anisotropy, Hc2(T) and irreversibility field Hirr(T) versus temperature were determinated. The Hall density of charge are slightly temperature dependence and positive in normal state. The critical temperature of 30-32 K and critical current density of 106-107 A/cm2 at 4, 2 K were obtained. Using extracted data, the coherence length ξ0, anisotropic coefficient γ and penetration depth λL were calculated.

Original languageEnglish
Pages (from-to)557-559
Number of pages3
JournalPhysica C: Superconductivity and its applications
Volume460-462 I
Issue numberSPEC. ISS.
Publication statusPublished - 2007 Sept 1


  • Hall effect
  • Magnetization
  • Magnetotransport properties
  • Thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering


Dive into the research topics of 'Superconductivity of MgB2 sputtered thin films with aluminium nitride buffer layers'. Together they form a unique fingerprint.

Cite this