Substrate current verifying lateral electrical field under forward substrate biases for nMOSFETs

Heng Sheng Huang, Mu Chun Wang, Zhen Ying Hsieh, Shuang Yuan Chen, Ai Erh Chuang, Chuan-Hsi Liu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Substrate current ISUB of an n-channel metal-oxide-semiconductor field-effect transistor (nMOSFET) depending on source/drain voltage VDS can be applied as a stress index in the hot carrier test. Usually, the substrate bias directly influences device performance, such as the threshold voltage and the source/drain current. On the other hand, the substrate biasing circuit benefits turn-on current and restrains the turn-off current. However, few studies assessed the change to substrate current when forcing different drain voltages and substrate biases. Furthermore, a unique phenomenon was observed: separation of ISUB curves and consentient trends existed while gate voltage VGS increased from 0 to 1.8 V and a turning point located around at the peak value of ISUB. Here, this study identifies the increase in surface inversion charge Qi from substrate effect in weak inversion layer more than in strong one is evidently correlated with this interesting symptom. In this study, the gate length LG and the gate width W of a measured nMOSFET device is 0.18 μm and 10 μm with a 90 nm process.

Original languageEnglish
Pages (from-to)527-529
Number of pages3
JournalSolid-State Electronics
Volume54
Issue number5
DOIs
Publication statusPublished - 2010 May 1

Keywords

  • Body effect
  • Degradation
  • Electrical field
  • Hot-carrier
  • MOS device

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

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