Abstract
Substrate current ISUB of an n-channel metal-oxide-semiconductor field-effect transistor (nMOSFET) depending on source/drain voltage VDS can be applied as a stress index in the hot carrier test. Usually, the substrate bias directly influences device performance, such as the threshold voltage and the source/drain current. On the other hand, the substrate biasing circuit benefits turn-on current and restrains the turn-off current. However, few studies assessed the change to substrate current when forcing different drain voltages and substrate biases. Furthermore, a unique phenomenon was observed: separation of ISUB curves and consentient trends existed while gate voltage VGS increased from 0 to 1.8 V and a turning point located around at the peak value of ISUB. Here, this study identifies the increase in surface inversion charge Qi from substrate effect in weak inversion layer more than in strong one is evidently correlated with this interesting symptom. In this study, the gate length LG and the gate width W of a measured nMOSFET device is 0.18 μm and 10 μm with a 90 nm process.
| Original language | English |
|---|---|
| Pages (from-to) | 527-529 |
| Number of pages | 3 |
| Journal | Solid-State Electronics |
| Volume | 54 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2010 May 1 |
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Keywords
- Body effect
- Degradation
- Electrical field
- Hot-carrier
- MOS device
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
- Materials Chemistry
Cite this
Substrate current verifying lateral electrical field under forward substrate biases for nMOSFETs. / Huang, Heng Sheng; Wang, Mu Chun; Hsieh, Zhen Ying; Chen, Shuang Yuan; Chuang, Ai Erh; Liu, Chuan-Hsi.
In: Solid-State Electronics, Vol. 54, No. 5, 01.05.2010, p. 527-529.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Substrate current verifying lateral electrical field under forward substrate biases for nMOSFETs
AU - Huang, Heng Sheng
AU - Wang, Mu Chun
AU - Hsieh, Zhen Ying
AU - Chen, Shuang Yuan
AU - Chuang, Ai Erh
AU - Liu, Chuan-Hsi
PY - 2010/5/1
Y1 - 2010/5/1
N2 - Substrate current ISUB of an n-channel metal-oxide-semiconductor field-effect transistor (nMOSFET) depending on source/drain voltage VDS can be applied as a stress index in the hot carrier test. Usually, the substrate bias directly influences device performance, such as the threshold voltage and the source/drain current. On the other hand, the substrate biasing circuit benefits turn-on current and restrains the turn-off current. However, few studies assessed the change to substrate current when forcing different drain voltages and substrate biases. Furthermore, a unique phenomenon was observed: separation of ISUB curves and consentient trends existed while gate voltage VGS increased from 0 to 1.8 V and a turning point located around at the peak value of ISUB. Here, this study identifies the increase in surface inversion charge Qi from substrate effect in weak inversion layer more than in strong one is evidently correlated with this interesting symptom. In this study, the gate length LG and the gate width W of a measured nMOSFET device is 0.18 μm and 10 μm with a 90 nm process.
AB - Substrate current ISUB of an n-channel metal-oxide-semiconductor field-effect transistor (nMOSFET) depending on source/drain voltage VDS can be applied as a stress index in the hot carrier test. Usually, the substrate bias directly influences device performance, such as the threshold voltage and the source/drain current. On the other hand, the substrate biasing circuit benefits turn-on current and restrains the turn-off current. However, few studies assessed the change to substrate current when forcing different drain voltages and substrate biases. Furthermore, a unique phenomenon was observed: separation of ISUB curves and consentient trends existed while gate voltage VGS increased from 0 to 1.8 V and a turning point located around at the peak value of ISUB. Here, this study identifies the increase in surface inversion charge Qi from substrate effect in weak inversion layer more than in strong one is evidently correlated with this interesting symptom. In this study, the gate length LG and the gate width W of a measured nMOSFET device is 0.18 μm and 10 μm with a 90 nm process.
KW - Body effect
KW - Degradation
KW - Electrical field
KW - Hot-carrier
KW - MOS device
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UR - http://www.scopus.com/inward/citedby.url?scp=77949310487&partnerID=8YFLogxK
U2 - 10.1016/j.sse.2009.12.041
DO - 10.1016/j.sse.2009.12.041
M3 - Article
AN - SCOPUS:77949310487
VL - 54
SP - 527
EP - 529
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
IS - 5
ER -