Sub-micro watt resistive memories using nano-crystallized aluminum oxynitride dielectric

N. H. Chen, Z. W. Zheng, Chun-Hu Cheng, F. S. Yeh

Research output: Contribution to journalArticle

Abstract

Using nano-crystallized aluminum oxynitride (nc-AlOxN y) dielectric, the Al/nc-AlOxNy/AlN/n +-Si resistive random access memory (RRAM) with ultralow sub-micro watt power is reported in this study. The RRAM devices exhibit excellent memory characteristics, including reproducible bipolar resistive switching under >100 times memory window, very low set and reset current of ∼10 nA, high voltage distributions and good data retention. It is demonstrated that the reset current decreases as the compliance current decreases, which provides an approach to lower the power consumption. The conduction mechanisms for high- and low-resistance states are dominated by Frenkel-Poole conduction and space-charge-limited current, respectively. These good memory characteristics in this RRAM show great potential in future high-performance memory applications.

Original languageEnglish
Pages (from-to)575-579
Number of pages5
JournalApplied Physics A: Materials Science and Processing
Volume116
Issue number2
DOIs
Publication statusPublished - 2014 Jan 1

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Aluminum
Data storage equipment
aluminum oxynitride
Electric space charge
Electric power utilization
Electric potential

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

Cite this

Sub-micro watt resistive memories using nano-crystallized aluminum oxynitride dielectric. / Chen, N. H.; Zheng, Z. W.; Cheng, Chun-Hu; Yeh, F. S.

In: Applied Physics A: Materials Science and Processing, Vol. 116, No. 2, 01.01.2014, p. 575-579.

Research output: Contribution to journalArticle

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