Sub-bandgap photoluminescence properties of multilayer h-BN-on-sapphire

Shantanu Saha; Yu Chen Chang; Tilo Hongwei Yang; Anthony Rice; Arnob Ghosh; Weicheng You; Mary Crawford; Ting Hua Lu; Yann Wen Lan; Shamsul Arafin

doi:10.1088/1361-6528/ac5283

Sub-bandgap photoluminescence properties of multilayer h-BN-on-sapphire

Shantanu Saha, Yu Chen Chang, Tilo Hongwei Yang, Anthony Rice, Arnob Ghosh, Weicheng You, Mary Crawford, Ting Hua Lu, Yann Wen Lan, Shamsul Arafin^*

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Two-dimensional hexagonal boron nitride (h-BN) materials have garnered increasing attention due to its ability of hosting intrinsic quantum point defects. This paper presents a photoluminescence (PL) mapping study related to sub-bandgap-level emission in bulk-like multilayer h-BN films. Spatial PL intensity distributions were carefully analyzed with 500 nm spatial resolution in terms of zero phonon line (ZPL) and phonon sideband (PSB) emission-peaks and their linewidths, thereby identifying the potential quantum point defects within the films. Two types of ZPL and PSB emissions were confirmed from the point defects located at the non-edge and edge of the films. Our statistical PL data from the non-edge-and edge-areas of the sample consistently reveal broad and narrow emissions, respectively. The measured optical properties of these defects and the associated ZPL peak shift and line broadening as a function of temperature between 77° and 300° K are qualitatively and quantitatively explained. Moreover, an enhancement of the photostable PL emission by at least a factor of ×3 is observed when our pristine h-BN was irradiated with a 532 nm laser.

Original language	English
Article number	215702
Journal	Nanotechnology
Volume	33
Issue number	21
DOIs	https://doi.org/10.1088/1361-6528/ac5283
Publication status	Published - 2022 May 21

Keywords

dangling bond
h-BN
photoluminescence
quantum point defects
single photon emission
zero phonon line

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/1361-6528/ac5283

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title = "Sub-bandgap photoluminescence properties of multilayer h-BN-on-sapphire",

abstract = "Two-dimensional hexagonal boron nitride (h-BN) materials have garnered increasing attention due to its ability of hosting intrinsic quantum point defects. This paper presents a photoluminescence (PL) mapping study related to sub-bandgap-level emission in bulk-like multilayer h-BN films. Spatial PL intensity distributions were carefully analyzed with 500 nm spatial resolution in terms of zero phonon line (ZPL) and phonon sideband (PSB) emission-peaks and their linewidths, thereby identifying the potential quantum point defects within the films. Two types of ZPL and PSB emissions were confirmed from the point defects located at the non-edge and edge of the films. Our statistical PL data from the non-edge-and edge-areas of the sample consistently reveal broad and narrow emissions, respectively. The measured optical properties of these defects and the associated ZPL peak shift and line broadening as a function of temperature between 77° and 300° K are qualitatively and quantitatively explained. Moreover, an enhancement of the photostable PL emission by at least a factor of ×3 is observed when our pristine h-BN was irradiated with a 532 nm laser.",

keywords = "dangling bond, h-BN, photoluminescence, quantum point defects, single photon emission, zero phonon line",

author = "Shantanu Saha and Chang, {Yu Chen} and Yang, {Tilo Hongwei} and Anthony Rice and Arnob Ghosh and Weicheng You and Mary Crawford and Lu, {Ting Hua} and Lan, {Yann Wen} and Shamsul Arafin",

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doi = "10.1088/1361-6528/ac5283",

language = "English",

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T1 - Sub-bandgap photoluminescence properties of multilayer h-BN-on-sapphire

AU - Saha, Shantanu

AU - Chang, Yu Chen

AU - Yang, Tilo Hongwei

AU - Rice, Anthony

AU - Ghosh, Arnob

AU - You, Weicheng

AU - Crawford, Mary

AU - Lu, Ting Hua

AU - Lan, Yann Wen

AU - Arafin, Shamsul

PY - 2022/5/21

Y1 - 2022/5/21

N2 - Two-dimensional hexagonal boron nitride (h-BN) materials have garnered increasing attention due to its ability of hosting intrinsic quantum point defects. This paper presents a photoluminescence (PL) mapping study related to sub-bandgap-level emission in bulk-like multilayer h-BN films. Spatial PL intensity distributions were carefully analyzed with 500 nm spatial resolution in terms of zero phonon line (ZPL) and phonon sideband (PSB) emission-peaks and their linewidths, thereby identifying the potential quantum point defects within the films. Two types of ZPL and PSB emissions were confirmed from the point defects located at the non-edge and edge of the films. Our statistical PL data from the non-edge-and edge-areas of the sample consistently reveal broad and narrow emissions, respectively. The measured optical properties of these defects and the associated ZPL peak shift and line broadening as a function of temperature between 77° and 300° K are qualitatively and quantitatively explained. Moreover, an enhancement of the photostable PL emission by at least a factor of ×3 is observed when our pristine h-BN was irradiated with a 532 nm laser.

AB - Two-dimensional hexagonal boron nitride (h-BN) materials have garnered increasing attention due to its ability of hosting intrinsic quantum point defects. This paper presents a photoluminescence (PL) mapping study related to sub-bandgap-level emission in bulk-like multilayer h-BN films. Spatial PL intensity distributions were carefully analyzed with 500 nm spatial resolution in terms of zero phonon line (ZPL) and phonon sideband (PSB) emission-peaks and their linewidths, thereby identifying the potential quantum point defects within the films. Two types of ZPL and PSB emissions were confirmed from the point defects located at the non-edge and edge of the films. Our statistical PL data from the non-edge-and edge-areas of the sample consistently reveal broad and narrow emissions, respectively. The measured optical properties of these defects and the associated ZPL peak shift and line broadening as a function of temperature between 77° and 300° K are qualitatively and quantitatively explained. Moreover, an enhancement of the photostable PL emission by at least a factor of ×3 is observed when our pristine h-BN was irradiated with a 532 nm laser.

KW - dangling bond

KW - h-BN

KW - photoluminescence

KW - quantum point defects

KW - single photon emission

KW - zero phonon line

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Sub-bandgap photoluminescence properties of multilayer h-BN-on-sapphire

Abstract

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