Sub-60mV-swing negative-capacitance FinFET without hysteresis

Kai Shin Li; Pin Guang Chen; Tung Yan Lai; Chang Hsien Lin; Cheng Chih Cheng; Chun Chi Chen; Yun Jie Wei; Yun Fang Hou; Ming Han Liao; Min Hung Lee; Min Cheng Chen; Jia Min Sheih; Wen Kuan Yeh; Fu Liang Yang; Sayeef Salahuddin; Chenming Hu

doi:10.1109/IEDM.2015.7409760

Sub-60mV-swing negative-capacitance FinFET without hysteresis

Kai Shin Li, Pin Guang Chen, Tung Yan Lai, Chang Hsien Lin, Cheng Chih Cheng, Chun Chi Chen, Yun Jie Wei, Yun Fang Hou, Ming Han Liao, Min Hung Lee, Min Cheng Chen, Jia Min Sheih, Wen Kuan Yeh, Fu Liang Yang, Sayeef Salahuddin, Chenming Hu

Undergraduate Program of Electro-Optical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

242 Citations (Scopus)

Abstract

In this work, we report the first Negative-Capacitance FinFET. ALD Hf₀₄₂Zr₀₅₈O₂ is added on top of the FinFET's gate stack. The test devices have a floating internal gate that can be electrically probed. Direct measurement found the small-signal voltage amplified by 1.6X maximum at the internal gate in agreement with the improvement of the subthreshold swing (from 87 to 55mV/decade). ION increased by >25% for the IOFF. For the first time, we demonstrate that raising HfZrO₂ ferroelectricity, by annealing at higher temperature, reduces and eliminates IV hysteresis and increases the voltage gain. These discoveries will guide future theoretical and experimental work.

Original language	English
Title of host publication	2015 IEEE International Electron Devices Meeting, IEDM 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	22.6.1-22.6.4
ISBN (Electronic)	9781467398930
DOIs	https://doi.org/10.1109/IEDM.2015.7409760
Publication status	Published - 2015 Feb 16
Event	61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States Duration: 2015 Dec 7 → 2015 Dec 9

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2016-February
ISSN (Print)	0163-1918

Other

Other	61st IEEE International Electron Devices Meeting, IEDM 2015
Country/Territory	United States
City	Washington
Period	2015/12/07 → 2015/12/09

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2015.7409760

Cite this

Li, K. S., Chen, P. G., Lai, T. Y., Lin, C. H., Cheng, C. C., Chen, C. C., Wei, Y. J., Hou, Y. F., Liao, M. H., Lee, M. H., Chen, M. C., Sheih, J. M., Yeh, W. K., Yang, F. L., Salahuddin, S., & Hu, C. (2015). Sub-60mV-swing negative-capacitance FinFET without hysteresis. In 2015 IEEE International Electron Devices Meeting, IEDM 2015 (pp. 22.6.1-22.6.4). Article 7409760 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2016-February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2015.7409760

Sub-60mV-swing negative-capacitance FinFET without hysteresis. / Li, Kai Shin; Chen, Pin Guang; Lai, Tung Yan et al.
2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 22.6.1-22.6.4 7409760 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2016-February).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Li, KS, Chen, PG, Lai, TY, Lin, CH, Cheng, CC, Chen, CC, Wei, YJ, Hou, YF, Liao, MH, Lee, MH, Chen, MC, Sheih, JM, Yeh, WK, Yang, FL, Salahuddin, S & Hu, C 2015, Sub-60mV-swing negative-capacitance FinFET without hysteresis. in 2015 IEEE International Electron Devices Meeting, IEDM 2015., 7409760, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2016-February, Institute of Electrical and Electronics Engineers Inc., pp. 22.6.1-22.6.4, 61st IEEE International Electron Devices Meeting, IEDM 2015, Washington, United States, 2015/12/07. https://doi.org/10.1109/IEDM.2015.7409760

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abstract = "In this work, we report the first Negative-Capacitance FinFET. ALD Hf042Zr058O2 is added on top of the FinFET's gate stack. The test devices have a floating internal gate that can be electrically probed. Direct measurement found the small-signal voltage amplified by 1.6X maximum at the internal gate in agreement with the improvement of the subthreshold swing (from 87 to 55mV/decade). ION increased by >25% for the IOFF. For the first time, we demonstrate that raising HfZrO2 ferroelectricity, by annealing at higher temperature, reduces and eliminates IV hysteresis and increases the voltage gain. These discoveries will guide future theoretical and experimental work.",

author = "Li, {Kai Shin} and Chen, {Pin Guang} and Lai, {Tung Yan} and Lin, {Chang Hsien} and Cheng, {Cheng Chih} and Chen, {Chun Chi} and Wei, {Yun Jie} and Hou, {Yun Fang} and Liao, {Ming Han} and Lee, {Min Hung} and Chen, {Min Cheng} and Sheih, {Jia Min} and Yeh, {Wen Kuan} and Yang, {Fu Liang} and Sayeef Salahuddin and Chenming Hu",

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AU - Li, Kai Shin

AU - Chen, Pin Guang

AU - Lai, Tung Yan

AU - Lin, Chang Hsien

AU - Cheng, Cheng Chih

AU - Chen, Chun Chi

AU - Wei, Yun Jie

AU - Hou, Yun Fang

AU - Liao, Ming Han

AU - Lee, Min Hung

AU - Chen, Min Cheng

AU - Sheih, Jia Min

AU - Yeh, Wen Kuan

AU - Yang, Fu Liang

AU - Salahuddin, Sayeef

AU - Hu, Chenming

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N2 - In this work, we report the first Negative-Capacitance FinFET. ALD Hf042Zr058O2 is added on top of the FinFET's gate stack. The test devices have a floating internal gate that can be electrically probed. Direct measurement found the small-signal voltage amplified by 1.6X maximum at the internal gate in agreement with the improvement of the subthreshold swing (from 87 to 55mV/decade). ION increased by >25% for the IOFF. For the first time, we demonstrate that raising HfZrO2 ferroelectricity, by annealing at higher temperature, reduces and eliminates IV hysteresis and increases the voltage gain. These discoveries will guide future theoretical and experimental work.

AB - In this work, we report the first Negative-Capacitance FinFET. ALD Hf042Zr058O2 is added on top of the FinFET's gate stack. The test devices have a floating internal gate that can be electrically probed. Direct measurement found the small-signal voltage amplified by 1.6X maximum at the internal gate in agreement with the improvement of the subthreshold swing (from 87 to 55mV/decade). ION increased by >25% for the IOFF. For the first time, we demonstrate that raising HfZrO2 ferroelectricity, by annealing at higher temperature, reduces and eliminates IV hysteresis and increases the voltage gain. These discoveries will guide future theoretical and experimental work.

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Sub-60mV-swing negative-capacitance FinFET without hysteresis

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