Skip to main navigation Skip to search Skip to main content

Sub-2 nm Equivalent-Oxide-Thickness Ferroelectric Transistors for Cryogenic Memory and Computing

  • Apu Das
  • , Asim Senapati
  • , Gautham Kumar
  • , Zhao Feng Lou
  • , Jonas Müller
  • , Jaskirat Singh Maskeen
  • , Yii Tay Chang
  • , Mohit Tewari
  • , Ankit Agarwal
  • , Agniva Paul
  • , Yannick Raffel
  • , Siddheswar Maikap
  • , Kuo Hsing Kao
  • , Tarun Agarwal
  • , Sandip Lashkare
  • , Darsen Lu*
  • , Guilhem Larrieu*
  • , Min Hung Lee*
  • , Sourav De*
    • *Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3   Link opens in a new tab Citations (Scopus)

Fingerprint

Dive into the research topics of 'Sub-2 nm Equivalent-Oxide-Thickness Ferroelectric Transistors for Cryogenic Memory and Computing'. Together they form a unique fingerprint.
Sort by

INIS

Engineering

Material Science