Studying the impact of carbon on device performance for strained-Si MOSFETs

M. H. Lee, S. T. Chang*, C. Y. Peng, B. F. Hsieh, S. Maikap, S. H. Liao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


The strained-Si:C long channel MOSFET on a relaxed SiGe buffer is demonstrated in this study. The extracted electron mobility showed an enhancement of ~40% with the incorporation of 0.25% carbon in strained-Si long channel NMOSFETs. However, no improvement was seen in the output characteristics of the strained-Si:C PMOSFET. The performance enhancement seen is less than the theoretical prediction for increasing carbon content; this is due to the high alloy scattering potential with carbon incorporation, high interface state density (Dit) at the oxide/strained-Si:C interface and interstitial carbon induced Coulomb scattering. However, increased amounts of C may result in degraded device performance. Therefore, a balance must be struck to minimize C-induced extra Coulomb and alloy scattering rates in the fabrication of these devices.

Original languageEnglish
Pages (from-to)105-109
Number of pages5
JournalThin Solid Films
Issue number1
Publication statusPublished - 2008 Nov 3


  • Alloy scattering
  • Carbon
  • Interface state density
  • Mobility
  • SiGe buffer
  • Strain
  • Strained-Si:C
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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