Study of the internal electric fields across the interfaces in the GaAs/(1Al,Ga)As microstructures

Chien-Rong Lu, C. L. Chang, C. H. Liou, J. R. Anderson, D. R. Stone, R. A. Wilson

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The electro-optical properties of MBE grown selectively doped GaAs/Al 0.3 Ga 0.7 As heterostructures have been studied by photoreflectance spectroscopy. The spectra contained three types of oscillations in different spectra regions. The origins of different features in the spectra were identified by comparing the spectra after different layers were etched off, and under external electric fields. There are two types of spectra oscillations above the energy gap of the GaAs. The one with a large oscillation period was due to the modulation of the internal electric field in the cap region and the one with a small period originated from the space-charge region near the back GaAs/Al 0.3 Ga 0.7 As interface. The lineshape oscillations above the energy gap of Al 0.3 Ga 0.7 As originate from the undoped Al 0.3 Ga 0.7 As spacer. The internal electric fields were deduced from the spectra, and compared with the numerically calculated results.

Original languageEnglish
Pages (from-to)404-407
Number of pages4
JournalApplied Surface Science
Volume92
DOIs
Publication statusPublished - 1996 Jan 1

Fingerprint

Electric fields
Microstructure
Energy gap
Electric space charge
Molecular beam epitaxy
Heterojunctions
Optical properties
Modulation
Spectroscopy
gallium arsenide

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

Study of the internal electric fields across the interfaces in the GaAs/(1Al,Ga)As microstructures. / Lu, Chien-Rong; Chang, C. L.; Liou, C. H.; Anderson, J. R.; Stone, D. R.; Wilson, R. A.

In: Applied Surface Science, Vol. 92, 01.01.1996, p. 404-407.

Research output: Contribution to journalArticle

Lu, Chien-Rong ; Chang, C. L. ; Liou, C. H. ; Anderson, J. R. ; Stone, D. R. ; Wilson, R. A. / Study of the internal electric fields across the interfaces in the GaAs/(1Al,Ga)As microstructures. In: Applied Surface Science. 1996 ; Vol. 92. pp. 404-407.
@article{4ecda7822a714314b37ae937b6e4ba1b,
title = "Study of the internal electric fields across the interfaces in the GaAs/(1Al,Ga)As microstructures",
abstract = "The electro-optical properties of MBE grown selectively doped GaAs/Al 0.3 Ga 0.7 As heterostructures have been studied by photoreflectance spectroscopy. The spectra contained three types of oscillations in different spectra regions. The origins of different features in the spectra were identified by comparing the spectra after different layers were etched off, and under external electric fields. There are two types of spectra oscillations above the energy gap of the GaAs. The one with a large oscillation period was due to the modulation of the internal electric field in the cap region and the one with a small period originated from the space-charge region near the back GaAs/Al 0.3 Ga 0.7 As interface. The lineshape oscillations above the energy gap of Al 0.3 Ga 0.7 As originate from the undoped Al 0.3 Ga 0.7 As spacer. The internal electric fields were deduced from the spectra, and compared with the numerically calculated results.",
author = "Chien-Rong Lu and Chang, {C. L.} and Liou, {C. H.} and Anderson, {J. R.} and Stone, {D. R.} and Wilson, {R. A.}",
year = "1996",
month = "1",
day = "1",
doi = "10.1016/0169-4332(95)00265-0",
language = "English",
volume = "92",
pages = "404--407",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",

}

TY - JOUR

T1 - Study of the internal electric fields across the interfaces in the GaAs/(1Al,Ga)As microstructures

AU - Lu, Chien-Rong

AU - Chang, C. L.

AU - Liou, C. H.

AU - Anderson, J. R.

AU - Stone, D. R.

AU - Wilson, R. A.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - The electro-optical properties of MBE grown selectively doped GaAs/Al 0.3 Ga 0.7 As heterostructures have been studied by photoreflectance spectroscopy. The spectra contained three types of oscillations in different spectra regions. The origins of different features in the spectra were identified by comparing the spectra after different layers were etched off, and under external electric fields. There are two types of spectra oscillations above the energy gap of the GaAs. The one with a large oscillation period was due to the modulation of the internal electric field in the cap region and the one with a small period originated from the space-charge region near the back GaAs/Al 0.3 Ga 0.7 As interface. The lineshape oscillations above the energy gap of Al 0.3 Ga 0.7 As originate from the undoped Al 0.3 Ga 0.7 As spacer. The internal electric fields were deduced from the spectra, and compared with the numerically calculated results.

AB - The electro-optical properties of MBE grown selectively doped GaAs/Al 0.3 Ga 0.7 As heterostructures have been studied by photoreflectance spectroscopy. The spectra contained three types of oscillations in different spectra regions. The origins of different features in the spectra were identified by comparing the spectra after different layers were etched off, and under external electric fields. There are two types of spectra oscillations above the energy gap of the GaAs. The one with a large oscillation period was due to the modulation of the internal electric field in the cap region and the one with a small period originated from the space-charge region near the back GaAs/Al 0.3 Ga 0.7 As interface. The lineshape oscillations above the energy gap of Al 0.3 Ga 0.7 As originate from the undoped Al 0.3 Ga 0.7 As spacer. The internal electric fields were deduced from the spectra, and compared with the numerically calculated results.

UR - http://www.scopus.com/inward/record.url?scp=0030562539&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030562539&partnerID=8YFLogxK

U2 - 10.1016/0169-4332(95)00265-0

DO - 10.1016/0169-4332(95)00265-0

M3 - Article

VL - 92

SP - 404

EP - 407

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -