Structural stability of thermoelectric diffusion barriers: Experimental results and first principles calculations

Hsiao Hsuan Hsu, Chun Hu Cheng, Yu Li Lin, Shan Haw Chiou, Chiung Hui Huang, Chin Pao Cheng

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

This study demonstrates the feasibility of producing a tantalum nitride (TaN) thin film as a diffusion barrier and buffer layer for p-type bismuth telluride [(Bi,Sb)2Te3] thermoelectric devices. A network of TaN with nitrogen (N) incorporation is structurally more stable on (Bi,Sb)2Te3 than the conventional Ni diffusion barrier because of less inter-diffusion and a greater likelihood of stoichiometry in the TaN/(Bi,Sb)2Te3 interface. The atomic inter-diffusion between the barrier layers and (Bi,Sb)2Te3 was evaluated in terms of interface adhesion energy using nanoscratching, and proved with first-principles calculations.

Original languageEnglish
Article number053902
JournalApplied Physics Letters
Volume103
Issue number5
DOIs
Publication statusPublished - 2013 Jul 29

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structural stability
tantalum nitrides
barrier layers
bismuth tellurides
stoichiometry
adhesion
buffers
nitrogen
thin films
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Structural stability of thermoelectric diffusion barriers : Experimental results and first principles calculations. / Hsu, Hsiao Hsuan; Cheng, Chun Hu; Lin, Yu Li; Chiou, Shan Haw; Huang, Chiung Hui; Cheng, Chin Pao.

In: Applied Physics Letters, Vol. 103, No. 5, 053902, 29.07.2013.

Research output: Contribution to journalArticle

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