Structural stability of thermoelectric diffusion barriers: Experimental results and first principles calculations

Hsiao Hsuan Hsu, Chun Hu Cheng, Yu Li Lin, Shan Haw Chiou, Chiung Hui Huang, Chin Pao Cheng

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

This study demonstrates the feasibility of producing a tantalum nitride (TaN) thin film as a diffusion barrier and buffer layer for p-type bismuth telluride [(Bi,Sb)2Te3] thermoelectric devices. A network of TaN with nitrogen (N) incorporation is structurally more stable on (Bi,Sb)2Te3 than the conventional Ni diffusion barrier because of less inter-diffusion and a greater likelihood of stoichiometry in the TaN/(Bi,Sb)2Te3 interface. The atomic inter-diffusion between the barrier layers and (Bi,Sb)2Te3 was evaluated in terms of interface adhesion energy using nanoscratching, and proved with first-principles calculations.

Original languageEnglish
Article number053902
JournalApplied Physics Letters
Volume103
Issue number5
DOIs
Publication statusPublished - 2013 Jul 29

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Structural stability of thermoelectric diffusion barriers: Experimental results and first principles calculations'. Together they form a unique fingerprint.

  • Cite this