Structural properties of ultra-thin Y2O3 gate dielectrics studied by X-Ray Diffraction (XRD) and X-Ray Photoelectron Spectroscopy (XPS)

Chuan Hsi Liu; Pi Chun Juan; Chin Pao Cheng; Guan Ting Lai; Huan Lee; Yi Kuan Chen; Yu Wei Liu; Chih Wei Hsu

doi:10.1109/INEC.2010.5424914

Structural properties of ultra-thin Y₂O₃ gate dielectrics studied by X-Ray Diffraction (XRD) and X-Ray Photoelectron Spectroscopy (XPS)

Chuan Hsi Liu^*, Pi Chun Juan, Chin Pao Cheng, Guan Ting Lai, Huan Lee, Yi Kuan Chen, Yu Wei Liu, Chih Wei Hsu

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Ultra-thin yttrium oxide (Y₂O₃) films (physical thickness of 7 nm) were deposited on p-Si substrates by RF sputtering for MOS applications. The structural properties of the Y₂O₃ gate dielectrics were studied after RTA from 650 to 850°C. The crystalline phase and chemical bonding state of the films were characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), respectively. According to the XRD patterns, Y₂O₃ films remain amorphous after 850°C annealing. Moreover, also confirmed by XPS results, the formation of yttrium silicates (YSiO) was observed after 650°C annealing, and the silicate thickness increases with the annealing temperature. It is suggested that the thickness of the silicate layer YSiO dominates the gate leakage current of the MOS capacitors.

Original language	English
Title of host publication	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages	1256-1257
Number of pages	2
DOIs	https://doi.org/10.1109/INEC.2010.5424914
Publication status	Published - 2010
Event	2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China Duration: 2010 Jan 3 → 2010 Jan 8

Publication series

Name	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other	2010 3rd International Nanoelectronics Conference, INEC 2010
Country/Territory	China
City	Hongkong
Period	2010/01/03 → 2010/01/08

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/INEC.2010.5424914

Cite this

Liu, C. H., Juan, P. C., Cheng, C. P., Lai, G. T., Lee, H., Chen, Y. K., Liu, Y. W., & Hsu, C. W. (2010). Structural properties of ultra-thin Y₂O₃ gate dielectrics studied by X-Ray Diffraction (XRD) and X-Ray Photoelectron Spectroscopy (XPS). In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 1256-1257). Article 5424914 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424914

Structural properties of ultra-thin Y₂O₃ gate dielectrics studied by X-Ray Diffraction (XRD) and X-Ray Photoelectron Spectroscopy (XPS). / Liu, Chuan Hsi; Juan, Pi Chun; Cheng, Chin Pao et al.
INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 1256-1257 5424914 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liu, CH, Juan, PC, Cheng, CP, Lai, GT, Lee, H, Chen, YK, Liu, YW & Hsu, CW 2010, Structural properties of ultra-thin Y₂O₃ gate dielectrics studied by X-Ray Diffraction (XRD) and X-Ray Photoelectron Spectroscopy (XPS). in INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings., 5424914, INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, pp. 1256-1257, 2010 3rd International Nanoelectronics Conference, INEC 2010, Hongkong, China, 2010/01/03. https://doi.org/10.1109/INEC.2010.5424914

Liu CH, Juan PC, Cheng CP, Lai GT, Lee H, Chen YK et al. Structural properties of ultra-thin Y₂O₃ gate dielectrics studied by X-Ray Diffraction (XRD) and X-Ray Photoelectron Spectroscopy (XPS). In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 1256-1257. 5424914. (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). doi: 10.1109/INEC.2010.5424914

@inproceedings{839cf03dbb6a494e982b235d55710c76,

title = "Structural properties of ultra-thin Y2O3 gate dielectrics studied by X-Ray Diffraction (XRD) and X-Ray Photoelectron Spectroscopy (XPS)",

abstract = "Ultra-thin yttrium oxide (Y2O3) films (physical thickness of 7 nm) were deposited on p-Si substrates by RF sputtering for MOS applications. The structural properties of the Y2O3 gate dielectrics were studied after RTA from 650 to 850°C. The crystalline phase and chemical bonding state of the films were characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), respectively. According to the XRD patterns, Y2O3 films remain amorphous after 850°C annealing. Moreover, also confirmed by XPS results, the formation of yttrium silicates (YSiO) was observed after 650°C annealing, and the silicate thickness increases with the annealing temperature. It is suggested that the thickness of the silicate layer YSiO dominates the gate leakage current of the MOS capacitors.",

author = "Liu, {Chuan Hsi} and Juan, {Pi Chun} and Cheng, {Chin Pao} and Lai, {Guan Ting} and Huan Lee and Chen, {Yi Kuan} and Liu, {Yu Wei} and Hsu, {Chih Wei}",

year = "2010",

doi = "10.1109/INEC.2010.5424914",

language = "English",

isbn = "9781424435449",

series = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

pages = "1256--1257",

booktitle = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

note = "2010 3rd International Nanoelectronics Conference, INEC 2010 ; Conference date: 03-01-2010 Through 08-01-2010",

}

TY - GEN

T1 - Structural properties of ultra-thin Y2O3 gate dielectrics studied by X-Ray Diffraction (XRD) and X-Ray Photoelectron Spectroscopy (XPS)

AU - Liu, Chuan Hsi

AU - Juan, Pi Chun

AU - Cheng, Chin Pao

AU - Lai, Guan Ting

AU - Lee, Huan

AU - Chen, Yi Kuan

AU - Liu, Yu Wei

AU - Hsu, Chih Wei

PY - 2010

Y1 - 2010

N2 - Ultra-thin yttrium oxide (Y2O3) films (physical thickness of 7 nm) were deposited on p-Si substrates by RF sputtering for MOS applications. The structural properties of the Y2O3 gate dielectrics were studied after RTA from 650 to 850°C. The crystalline phase and chemical bonding state of the films were characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), respectively. According to the XRD patterns, Y2O3 films remain amorphous after 850°C annealing. Moreover, also confirmed by XPS results, the formation of yttrium silicates (YSiO) was observed after 650°C annealing, and the silicate thickness increases with the annealing temperature. It is suggested that the thickness of the silicate layer YSiO dominates the gate leakage current of the MOS capacitors.

AB - Ultra-thin yttrium oxide (Y2O3) films (physical thickness of 7 nm) were deposited on p-Si substrates by RF sputtering for MOS applications. The structural properties of the Y2O3 gate dielectrics were studied after RTA from 650 to 850°C. The crystalline phase and chemical bonding state of the films were characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), respectively. According to the XRD patterns, Y2O3 films remain amorphous after 850°C annealing. Moreover, also confirmed by XPS results, the formation of yttrium silicates (YSiO) was observed after 650°C annealing, and the silicate thickness increases with the annealing temperature. It is suggested that the thickness of the silicate layer YSiO dominates the gate leakage current of the MOS capacitors.

UR - http://www.scopus.com/inward/record.url?scp=77951663005&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77951663005&partnerID=8YFLogxK

U2 - 10.1109/INEC.2010.5424914

DO - 10.1109/INEC.2010.5424914

M3 - Conference contribution

AN - SCOPUS:77951663005

SN - 9781424435449

T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

SP - 1256

EP - 1257

BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

T2 - 2010 3rd International Nanoelectronics Conference, INEC 2010

Y2 - 3 January 2010 through 8 January 2010

ER -