Structural properties of ultra-thin Y2O3 gate dielectrics studied by X-Ray Diffraction (XRD) and X-Ray Photoelectron Spectroscopy (XPS)

Chuan Hsi Liu, Pi Chun Juan, Chin Pao Cheng, Guan Ting Lai, Huan Lee, Yi Kuan Chen, Yu Wei Liu, Chih Wei Hsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Ultra-thin yttrium oxide (Y2O3) films (physical thickness of 7 nm) were deposited on p-Si substrates by RF sputtering for MOS applications. The structural properties of the Y2O3 gate dielectrics were studied after RTA from 650 to 850°C. The crystalline phase and chemical bonding state of the films were characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), respectively. According to the XRD patterns, Y2O3 films remain amorphous after 850°C annealing. Moreover, also confirmed by XPS results, the formation of yttrium silicates (YSiO) was observed after 650°C annealing, and the silicate thickness increases with the annealing temperature. It is suggested that the thickness of the silicate layer YSiO dominates the gate leakage current of the MOS capacitors.

Original languageEnglish
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages1256-1257
Number of pages2
DOIs
Publication statusPublished - 2010 May 5
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: 2010 Jan 32010 Jan 8

Publication series

NameINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period10/1/310/1/8

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Structural properties of ultra-thin Y<sub>2</sub>O<sub>3</sub> gate dielectrics studied by X-Ray Diffraction (XRD) and X-Ray Photoelectron Spectroscopy (XPS)'. Together they form a unique fingerprint.

Cite this