Abstract
As the strained engineering technology of metal-oxide-semiconductor field effect transistors (MOS-FET) is scaled beyond the 22 nm node critical dimension, shallow trench isolation (STI) becomes one of the most important resolutions for isolate devices to enhance the carrier mobility of advanced transistors. Several key design factors of n-type MOSFET (NMOSFET) under the resultant loadings of STI structures and contact etching stop layers are sensitively analyzed for silicon channel stress via finite element method-based simulations integrated with the use of design of experienmnts. NMOSFETs with 15 nm deep sunken STI have achieved a ∼5% mobility enhancement as compared with a regular STI shape. By adopting simulation-based factorial designs, we have determined that the design factor of recess depth in STI is a critical factor influencing device performance. Moreover, a response surface curve on carrier mobility of NMOSFET under a consideration of combining the sunken STI and source/drain lengths is further presented in this research.
| Original language | English |
|---|---|
| Pages (from-to) | 2179-2184 |
| Number of pages | 6 |
| Journal | Journal of Nanoscience and Nanotechnology |
| Volume | 15 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2015 Jan 1 |
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Keywords
- ANOVA
- CESL
- Finite Element Analysis (FEA)
- STI
- Source/Drain
ASJC Scopus subject areas
- Bioengineering
- Chemistry(all)
- Biomedical Engineering
- Materials Science(all)
- Condensed Matter Physics
Cite this
Structural optimizations of silicon based NMOSFETs with a sunken STI pattern by using a robust stress simulation methodology. / Lee, Chang Chun; Liu, Chuan-Hsi; Cheng, Hsien Chie; Deng, Rong Hao.
In: Journal of Nanoscience and Nanotechnology, Vol. 15, No. 3, 01.01.2015, p. 2179-2184.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Structural optimizations of silicon based NMOSFETs with a sunken STI pattern by using a robust stress simulation methodology
AU - Lee, Chang Chun
AU - Liu, Chuan-Hsi
AU - Cheng, Hsien Chie
AU - Deng, Rong Hao
PY - 2015/1/1
Y1 - 2015/1/1
N2 - As the strained engineering technology of metal-oxide-semiconductor field effect transistors (MOS-FET) is scaled beyond the 22 nm node critical dimension, shallow trench isolation (STI) becomes one of the most important resolutions for isolate devices to enhance the carrier mobility of advanced transistors. Several key design factors of n-type MOSFET (NMOSFET) under the resultant loadings of STI structures and contact etching stop layers are sensitively analyzed for silicon channel stress via finite element method-based simulations integrated with the use of design of experienmnts. NMOSFETs with 15 nm deep sunken STI have achieved a ∼5% mobility enhancement as compared with a regular STI shape. By adopting simulation-based factorial designs, we have determined that the design factor of recess depth in STI is a critical factor influencing device performance. Moreover, a response surface curve on carrier mobility of NMOSFET under a consideration of combining the sunken STI and source/drain lengths is further presented in this research.
AB - As the strained engineering technology of metal-oxide-semiconductor field effect transistors (MOS-FET) is scaled beyond the 22 nm node critical dimension, shallow trench isolation (STI) becomes one of the most important resolutions for isolate devices to enhance the carrier mobility of advanced transistors. Several key design factors of n-type MOSFET (NMOSFET) under the resultant loadings of STI structures and contact etching stop layers are sensitively analyzed for silicon channel stress via finite element method-based simulations integrated with the use of design of experienmnts. NMOSFETs with 15 nm deep sunken STI have achieved a ∼5% mobility enhancement as compared with a regular STI shape. By adopting simulation-based factorial designs, we have determined that the design factor of recess depth in STI is a critical factor influencing device performance. Moreover, a response surface curve on carrier mobility of NMOSFET under a consideration of combining the sunken STI and source/drain lengths is further presented in this research.
KW - ANOVA
KW - CESL
KW - Finite Element Analysis (FEA)
KW - STI
KW - Source/Drain
UR - http://www.scopus.com/inward/record.url?scp=84920771949&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84920771949&partnerID=8YFLogxK
U2 - 10.1166/jnn.2015.10226
DO - 10.1166/jnn.2015.10226
M3 - Article
AN - SCOPUS:84920771949
VL - 15
SP - 2179
EP - 2184
JO - Journal of Nanoscience and Nanotechnology
JF - Journal of Nanoscience and Nanotechnology
SN - 1533-4880
IS - 3
ER -