Structural, optical, and magnetic properties of Ho-implanted GaN thin films

F. Y. Lo; J. Y. Guo; V. Ney; A. Ney; M. Y. Chern; A. Melnikov; S. Pezzagna; D. Reuter; A. D. Wieck; J. Massies

doi:10.1088/1742-6596/266/1/012097

Structural, optical, and magnetic properties of Ho-implanted GaN thin films

F. Y. Lo^*, J. Y. Guo, V. Ney, A. Ney, M. Y. Chern, A. Melnikov, S. Pezzagna, D. Reuter, A. D. Wieck, J. Massies

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Ho ions were implanted into highly-resistive molecular-beam-epitaxy grown GaN thin films with a 100kV focused-ion-beam implanter at room temperature (RT). The implantation doses of Ho ions ranges from 10¹⁴ to 10 ¹⁶ cm^-2. Without thermal annealing, the structural, optical, and magnetic properties of the Ho-implanted thin films were investigated. Structural properties studied by x-ray diffraction revealed Ho incorporation into GaN matrix without secondary phase. The overall photoluminescence of any implanted sample is weaker than that of the non-implanted one. The spectra show neutral-donor-bound exciton emission and defect-related blue luminescence. Blocked superparamagnetic behavior was identified from Ho-implanted samples at temperatures below RT by measurements with a superconducting quantum interference device. The highest ordering temperature is 100 K.

Original language	English
Article number	012097
Journal	Journal of Physics: Conference Series
Volume	266
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/266/1/012097
Publication status	Published - 2011

ASJC Scopus subject areas

General Physics and Astronomy

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10.1088/1742-6596/266/1/012097

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title = "Structural, optical, and magnetic properties of Ho-implanted GaN thin films",

abstract = "Ho ions were implanted into highly-resistive molecular-beam-epitaxy grown GaN thin films with a 100kV focused-ion-beam implanter at room temperature (RT). The implantation doses of Ho ions ranges from 1014 to 10 16 cm-2. Without thermal annealing, the structural, optical, and magnetic properties of the Ho-implanted thin films were investigated. Structural properties studied by x-ray diffraction revealed Ho incorporation into GaN matrix without secondary phase. The overall photoluminescence of any implanted sample is weaker than that of the non-implanted one. The spectra show neutral-donor-bound exciton emission and defect-related blue luminescence. Blocked superparamagnetic behavior was identified from Ho-implanted samples at temperatures below RT by measurements with a superconducting quantum interference device. The highest ordering temperature is 100 K.",

author = "Lo, {F. Y.} and Guo, {J. Y.} and V. Ney and A. Ney and Chern, {M. Y.} and A. Melnikov and S. Pezzagna and D. Reuter and Wieck, {A. D.} and J. Massies",

year = "2011",

doi = "10.1088/1742-6596/266/1/012097",

language = "English",

volume = "266",

journal = "Journal of Physics: Conference Series",

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T1 - Structural, optical, and magnetic properties of Ho-implanted GaN thin films

AU - Lo, F. Y.

AU - Guo, J. Y.

AU - Ney, V.

AU - Ney, A.

AU - Chern, M. Y.

AU - Melnikov, A.

AU - Pezzagna, S.

AU - Reuter, D.

AU - Wieck, A. D.

AU - Massies, J.

PY - 2011

Y1 - 2011

N2 - Ho ions were implanted into highly-resistive molecular-beam-epitaxy grown GaN thin films with a 100kV focused-ion-beam implanter at room temperature (RT). The implantation doses of Ho ions ranges from 1014 to 10 16 cm-2. Without thermal annealing, the structural, optical, and magnetic properties of the Ho-implanted thin films were investigated. Structural properties studied by x-ray diffraction revealed Ho incorporation into GaN matrix without secondary phase. The overall photoluminescence of any implanted sample is weaker than that of the non-implanted one. The spectra show neutral-donor-bound exciton emission and defect-related blue luminescence. Blocked superparamagnetic behavior was identified from Ho-implanted samples at temperatures below RT by measurements with a superconducting quantum interference device. The highest ordering temperature is 100 K.

AB - Ho ions were implanted into highly-resistive molecular-beam-epitaxy grown GaN thin films with a 100kV focused-ion-beam implanter at room temperature (RT). The implantation doses of Ho ions ranges from 1014 to 10 16 cm-2. Without thermal annealing, the structural, optical, and magnetic properties of the Ho-implanted thin films were investigated. Structural properties studied by x-ray diffraction revealed Ho incorporation into GaN matrix without secondary phase. The overall photoluminescence of any implanted sample is weaker than that of the non-implanted one. The spectra show neutral-donor-bound exciton emission and defect-related blue luminescence. Blocked superparamagnetic behavior was identified from Ho-implanted samples at temperatures below RT by measurements with a superconducting quantum interference device. The highest ordering temperature is 100 K.

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VL - 266

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

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M1 - 012097

ER -

Structural, optical, and magnetic properties of Ho-implanted GaN thin films

Abstract

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