Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films

Fang Yuh Lo, Cheng De Huang, Kai Chieh Chou, Jhong Yu Guo, Hsiang Lin Liu, Verena Ney, Andreas Ney, Stepan Shvarkov, Sébastien Pezzagna, Dirk Reuter, Chi Ta Chia, Ming Yau Chern, Andreas D. Wieck, Jean Massies

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12 Citations (Scopus)


Samarium ions of 200 keV in energy were implanted into highly-resistive molecular-beam-epitaxy grown GaN thin films with a focused-ion-beam implanter at room temperature. The implantation doses range from 1 × 1014 to 1 × 1016cm-2. Structural properties studied by x-ray diffraction and Raman-scattering spectroscopy revealed Sm incorporation into GaN matrix without secondary phase. The optical measurements showed that the band gap and optical constants changed very slightly by the implantation. Photoluminescence measurements showed emission spectra similar to p-type GaN for all samples. Magnetic investigations with a superconducting quantum interference device identified magnetic ordering for Sm dose of and above 1 × 1015cm-2 before thermal annealing, while ferromagnetism was only observed after thermal annealing from the sample with highest Sm dose. The long-range magnetic ordering can be attributed to interaction of Sm ions through the implantation-induced Ga vacancy.

Original languageEnglish
Article number043909
JournalJournal of Applied Physics
Issue number4
Publication statusPublished - 2014 Jul 28

ASJC Scopus subject areas

  • General Physics and Astronomy


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