Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films

Fang Yuh Lo; Cheng De Huang; Kai Chieh Chou; Jhong Yu Guo; Hsiang Lin Liu; Verena Ney; Andreas Ney; Stepan Shvarkov; Sébastien Pezzagna; Dirk Reuter; Chi Ta Chia; Ming Yau Chern; Andreas D. Wieck; Jean Massies

doi:10.1063/1.4891226

Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films

Fang Yuh Lo, Cheng De Huang, Kai Chieh Chou, Jhong Yu Guo, Hsiang Lin Liu, Verena Ney, Andreas Ney, Stepan Shvarkov, Sébastien Pezzagna, Dirk Reuter, Chi Ta Chia, Ming Yau Chern, Andreas D. Wieck, Jean Massies

Department of Physics

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Samarium ions of 200 keV in energy were implanted into highly-resistive molecular-beam-epitaxy grown GaN thin films with a focused-ion-beam implanter at room temperature. The implantation doses range from 1 × 10¹⁴ to 1 × 10¹⁶cm^-2. Structural properties studied by x-ray diffraction and Raman-scattering spectroscopy revealed Sm incorporation into GaN matrix without secondary phase. The optical measurements showed that the band gap and optical constants changed very slightly by the implantation. Photoluminescence measurements showed emission spectra similar to p-type GaN for all samples. Magnetic investigations with a superconducting quantum interference device identified magnetic ordering for Sm dose of and above 1 × 10¹⁵cm^-2 before thermal annealing, while ferromagnetism was only observed after thermal annealing from the sample with highest Sm dose. The long-range magnetic ordering can be attributed to interaction of Sm ions through the implantation-induced Ga vacancy.

Original language	English
Article number	043909
Journal	Journal of Applied Physics
Volume	116
Issue number	4
DOIs	https://doi.org/10.1063/1.4891226
Publication status	Published - 2014 Jul 28

ASJC Scopus subject areas

General Physics and Astronomy

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title = "Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films",

abstract = "Samarium ions of 200 keV in energy were implanted into highly-resistive molecular-beam-epitaxy grown GaN thin films with a focused-ion-beam implanter at room temperature. The implantation doses range from 1 × 1014 to 1 × 1016cm-2. Structural properties studied by x-ray diffraction and Raman-scattering spectroscopy revealed Sm incorporation into GaN matrix without secondary phase. The optical measurements showed that the band gap and optical constants changed very slightly by the implantation. Photoluminescence measurements showed emission spectra similar to p-type GaN for all samples. Magnetic investigations with a superconducting quantum interference device identified magnetic ordering for Sm dose of and above 1 × 1015cm-2 before thermal annealing, while ferromagnetism was only observed after thermal annealing from the sample with highest Sm dose. The long-range magnetic ordering can be attributed to interaction of Sm ions through the implantation-induced Ga vacancy.",

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year = "2014",

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doi = "10.1063/1.4891226",

language = "English",

volume = "116",

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T1 - Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films

AU - Lo, Fang Yuh

AU - Huang, Cheng De

AU - Chou, Kai Chieh

AU - Guo, Jhong Yu

AU - Liu, Hsiang Lin

AU - Ney, Verena

AU - Ney, Andreas

AU - Shvarkov, Stepan

AU - Pezzagna, Sébastien

AU - Reuter, Dirk

AU - Chia, Chi Ta

AU - Chern, Ming Yau

AU - Wieck, Andreas D.

AU - Massies, Jean

PY - 2014/7/28

Y1 - 2014/7/28

N2 - Samarium ions of 200 keV in energy were implanted into highly-resistive molecular-beam-epitaxy grown GaN thin films with a focused-ion-beam implanter at room temperature. The implantation doses range from 1 × 1014 to 1 × 1016cm-2. Structural properties studied by x-ray diffraction and Raman-scattering spectroscopy revealed Sm incorporation into GaN matrix without secondary phase. The optical measurements showed that the band gap and optical constants changed very slightly by the implantation. Photoluminescence measurements showed emission spectra similar to p-type GaN for all samples. Magnetic investigations with a superconducting quantum interference device identified magnetic ordering for Sm dose of and above 1 × 1015cm-2 before thermal annealing, while ferromagnetism was only observed after thermal annealing from the sample with highest Sm dose. The long-range magnetic ordering can be attributed to interaction of Sm ions through the implantation-induced Ga vacancy.

AB - Samarium ions of 200 keV in energy were implanted into highly-resistive molecular-beam-epitaxy grown GaN thin films with a focused-ion-beam implanter at room temperature. The implantation doses range from 1 × 1014 to 1 × 1016cm-2. Structural properties studied by x-ray diffraction and Raman-scattering spectroscopy revealed Sm incorporation into GaN matrix without secondary phase. The optical measurements showed that the band gap and optical constants changed very slightly by the implantation. Photoluminescence measurements showed emission spectra similar to p-type GaN for all samples. Magnetic investigations with a superconducting quantum interference device identified magnetic ordering for Sm dose of and above 1 × 1015cm-2 before thermal annealing, while ferromagnetism was only observed after thermal annealing from the sample with highest Sm dose. The long-range magnetic ordering can be attributed to interaction of Sm ions through the implantation-induced Ga vacancy.

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Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films

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