Structural differences between deuterated and hydrogenated silicon nitride/oxynitride

An Shih; Shin Hung Yeh; Si Chen Lee; T. R. Yang

doi:10.1063/1.1364645

Structural differences between deuterated and hydrogenated silicon nitride/oxynitride

An Shih^*, Shin Hung Yeh, Si Chen Lee, T. R. Yang

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Hydrogenated and deuterated silicon nitride (a-SiN_x:H and a-SiN_x :D) and silicon oxynitride (a-SiO_xN_y, :H and a-SiO_xN_y :D) films are prepared by plasma-enhanced chemical vapor deposition. Their transmission and photoluminescence spectra were measured. Both the photoluminescence and transmission spectra show that the deuterated films have higher energy gaps than those of the hydrogenated films in the same growth condition. The infrared absorption spectra of these samples are identified and compared in detail. From the infrared spectra, the interaction between N-D bond rocking vibration and Si-N bond stretching vibration is observed, which pushes N-D bond rocking vibration to a higher energy. It is also observed that the refractive index of deuterated film is lower than the hydrogenated film in the same growth condition due to its lower density.

Original language	English
Pages (from-to)	5355-5361
Number of pages	7
Journal	Journal of Applied Physics
Volume	89
Issue number	10
DOIs	https://doi.org/10.1063/1.1364645
Publication status	Published - 2001 May 15

ASJC Scopus subject areas

General Physics and Astronomy

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@article{43b493c656204132a290f68d1d82d8e6,

title = "Structural differences between deuterated and hydrogenated silicon nitride/oxynitride",

abstract = "Hydrogenated and deuterated silicon nitride (a-SiNx:H and a-SiNx :D) and silicon oxynitride (a-SiOxNy, :H and a-SiOxNy :D) films are prepared by plasma-enhanced chemical vapor deposition. Their transmission and photoluminescence spectra were measured. Both the photoluminescence and transmission spectra show that the deuterated films have higher energy gaps than those of the hydrogenated films in the same growth condition. The infrared absorption spectra of these samples are identified and compared in detail. From the infrared spectra, the interaction between N-D bond rocking vibration and Si-N bond stretching vibration is observed, which pushes N-D bond rocking vibration to a higher energy. It is also observed that the refractive index of deuterated film is lower than the hydrogenated film in the same growth condition due to its lower density.",

author = "An Shih and Yeh, {Shin Hung} and Lee, {Si Chen} and Yang, {T. R.}",

year = "2001",

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doi = "10.1063/1.1364645",

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volume = "89",

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journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Structural differences between deuterated and hydrogenated silicon nitride/oxynitride

AU - Shih, An

AU - Yeh, Shin Hung

AU - Lee, Si Chen

AU - Yang, T. R.

PY - 2001/5/15

Y1 - 2001/5/15

N2 - Hydrogenated and deuterated silicon nitride (a-SiNx:H and a-SiNx :D) and silicon oxynitride (a-SiOxNy, :H and a-SiOxNy :D) films are prepared by plasma-enhanced chemical vapor deposition. Their transmission and photoluminescence spectra were measured. Both the photoluminescence and transmission spectra show that the deuterated films have higher energy gaps than those of the hydrogenated films in the same growth condition. The infrared absorption spectra of these samples are identified and compared in detail. From the infrared spectra, the interaction between N-D bond rocking vibration and Si-N bond stretching vibration is observed, which pushes N-D bond rocking vibration to a higher energy. It is also observed that the refractive index of deuterated film is lower than the hydrogenated film in the same growth condition due to its lower density.

AB - Hydrogenated and deuterated silicon nitride (a-SiNx:H and a-SiNx :D) and silicon oxynitride (a-SiOxNy, :H and a-SiOxNy :D) films are prepared by plasma-enhanced chemical vapor deposition. Their transmission and photoluminescence spectra were measured. Both the photoluminescence and transmission spectra show that the deuterated films have higher energy gaps than those of the hydrogenated films in the same growth condition. The infrared absorption spectra of these samples are identified and compared in detail. From the infrared spectra, the interaction between N-D bond rocking vibration and Si-N bond stretching vibration is observed, which pushes N-D bond rocking vibration to a higher energy. It is also observed that the refractive index of deuterated film is lower than the hydrogenated film in the same growth condition due to its lower density.

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Structural differences between deuterated and hydrogenated silicon nitride/oxynitride

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