Structural and electronic differences between deuterated and hydrogenated amorphous silicon

An Shih, Jiun Lin Yeh, Si Chen Lee, T. R. Yang

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Both as-deposited and plasma-treated hydrogenated and deuterated amorphous silicon (a-Si:H and a-Si:D) films are prepared by plasma-enhanced chemical vapor deposition. Their structural and electronic characteristics are studied and compared. It is found that the deuterium concentration of a-Si:D is higher than the hydrogen concentration of a-Si:H in as-deposited samples, but is less in plasma-treated samples, which is consistent with the photoluminescence spectra. Besides, the proportionality constants relating the integrated stretching mode absorption to the concentrations of Si-D and Si-H bonds were determined, i.e., 1 × 1020 for Si-D and 6.9 × 1019 for Si-H, by means of secondary ion mass spectrometry.

Original languageEnglish
Pages (from-to)1684-1687
Number of pages4
JournalJournal of Applied Physics
Volume88
Issue number3
DOIs
Publication statusPublished - 2000 Aug

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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