Structural and electronic differences between deuterated and hydrogenated amorphous silicon

An Shih, Jiun Lin Yeh, Si Chen Lee, T. R. Yang

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Both as-deposited and plasma-treated hydrogenated and deuterated amorphous silicon (a-Si:H and a-Si:D) films are prepared by plasma-enhanced chemical vapor deposition. Their structural and electronic characteristics are studied and compared. It is found that the deuterium concentration of a-Si:D is higher than the hydrogen concentration of a-Si:H in as-deposited samples, but is less in plasma-treated samples, which is consistent with the photoluminescence spectra. Besides, the proportionality constants relating the integrated stretching mode absorption to the concentrations of Si-D and Si-H bonds were determined, i.e., 1 × 1020 for Si-D and 6.9 × 1019 for Si-H, by means of secondary ion mass spectrometry.

Original languageEnglish
Pages (from-to)1684-1687
Number of pages4
JournalJournal of Applied Physics
Volume88
Issue number3
DOIs
Publication statusPublished - 2000 Aug

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amorphous silicon
electronics
secondary ion mass spectrometry
deuterium
vapor deposition
photoluminescence
hydrogen

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Structural and electronic differences between deuterated and hydrogenated amorphous silicon. / Shih, An; Yeh, Jiun Lin; Lee, Si Chen; Yang, T. R.

In: Journal of Applied Physics, Vol. 88, No. 3, 08.2000, p. 1684-1687.

Research output: Contribution to journalArticle

@article{3d0d1f32ff7c43fbb5fafc26c505ccdb,
title = "Structural and electronic differences between deuterated and hydrogenated amorphous silicon",
abstract = "Both as-deposited and plasma-treated hydrogenated and deuterated amorphous silicon (a-Si:H and a-Si:D) films are prepared by plasma-enhanced chemical vapor deposition. Their structural and electronic characteristics are studied and compared. It is found that the deuterium concentration of a-Si:D is higher than the hydrogen concentration of a-Si:H in as-deposited samples, but is less in plasma-treated samples, which is consistent with the photoluminescence spectra. Besides, the proportionality constants relating the integrated stretching mode absorption to the concentrations of Si-D and Si-H bonds were determined, i.e., 1 × 1020 for Si-D and 6.9 × 1019 for Si-H, by means of secondary ion mass spectrometry.",
author = "An Shih and Yeh, {Jiun Lin} and Lee, {Si Chen} and Yang, {T. R.}",
year = "2000",
month = "8",
doi = "10.1063/1.373872",
language = "English",
volume = "88",
pages = "1684--1687",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "3",

}

TY - JOUR

T1 - Structural and electronic differences between deuterated and hydrogenated amorphous silicon

AU - Shih, An

AU - Yeh, Jiun Lin

AU - Lee, Si Chen

AU - Yang, T. R.

PY - 2000/8

Y1 - 2000/8

N2 - Both as-deposited and plasma-treated hydrogenated and deuterated amorphous silicon (a-Si:H and a-Si:D) films are prepared by plasma-enhanced chemical vapor deposition. Their structural and electronic characteristics are studied and compared. It is found that the deuterium concentration of a-Si:D is higher than the hydrogen concentration of a-Si:H in as-deposited samples, but is less in plasma-treated samples, which is consistent with the photoluminescence spectra. Besides, the proportionality constants relating the integrated stretching mode absorption to the concentrations of Si-D and Si-H bonds were determined, i.e., 1 × 1020 for Si-D and 6.9 × 1019 for Si-H, by means of secondary ion mass spectrometry.

AB - Both as-deposited and plasma-treated hydrogenated and deuterated amorphous silicon (a-Si:H and a-Si:D) films are prepared by plasma-enhanced chemical vapor deposition. Their structural and electronic characteristics are studied and compared. It is found that the deuterium concentration of a-Si:D is higher than the hydrogen concentration of a-Si:H in as-deposited samples, but is less in plasma-treated samples, which is consistent with the photoluminescence spectra. Besides, the proportionality constants relating the integrated stretching mode absorption to the concentrations of Si-D and Si-H bonds were determined, i.e., 1 × 1020 for Si-D and 6.9 × 1019 for Si-H, by means of secondary ion mass spectrometry.

UR - http://www.scopus.com/inward/record.url?scp=0008966260&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0008966260&partnerID=8YFLogxK

U2 - 10.1063/1.373872

DO - 10.1063/1.373872

M3 - Article

AN - SCOPUS:0008966260

VL - 88

SP - 1684

EP - 1687

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 3

ER -