Structural and electrical characteristics of thin film transistor employing an oriented crystalline InGaZnO channel

Shiang Shiou Yen; Hsiao Hsuan Hsu; Ping Chiou; Chun Hu Cheng; Chien Hung Tung; Yu Chien Lai; Hung Wei Li; Chih Pang Chang; Hsueh Hsing Lu; Ching Sang Chuang; Yu Hsin Lin; Chun Yen Chang

doi:10.7567/JJAP.54.04DF05

Structural and electrical characteristics of thin film transistor employing an oriented crystalline InGaZnO channel

Shiang Shiou Yen, Hsiao Hsuan Hsu, Ping Chiou, Chun Hu Cheng^*, Chien Hung Tung, Yu Chien Lai, Hung Wei Li, Chih Pang Chang, Hsueh Hsing Lu, Ching Sang Chuang, Yu Hsin Lin, Chun Yen Chang

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this study, we investigate the impact of orientated crystalline InGaZnO (IGZO) thin film transistor. To evaluate interface thermodynamic stability of temperature-sensitive IGZO film, the film-structural stabilities of high- and low-indium-content InGaZnO were studied. With increasing annealing temperature up to 700 °C, the crystallinity becomes more pronounced while device electrical characteristics are further improved. We find that the apparently reduced off-state current can be attributed to the formation of c-axis-orientated crystalline located at the X-ray diffraction peak of (0, 0, 16). The performance improvements include a very low turn-on voltage close to zero voltage, a small subthreshold swing of 130mV/dec, and a low off-state current of 2.4 × 10^-14A/μm at a low operating voltage of 4V.

Original language	English
Article number	04DF05
Journal	Japanese Journal of Applied Physics
Volume	54
Issue number	4
DOIs	https://doi.org/10.7567/JJAP.54.04DF05
Publication status	Published - 2015 Apr 1

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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Yen, S. S., Hsu, H. H., Chiou, P., Cheng, C. H., Tung, C. H., Lai, Y. C., Li, H. W., Chang, C. P., Lu, H. H., Chuang, C. S., Lin, Y. H., & Chang, C. Y. (2015). Structural and electrical characteristics of thin film transistor employing an oriented crystalline InGaZnO channel. Japanese Journal of Applied Physics, 54(4), Article 04DF05. https://doi.org/10.7567/JJAP.54.04DF05

@article{7d2cb78319c447e69a58b9e0a0b0b3c3,

title = "Structural and electrical characteristics of thin film transistor employing an oriented crystalline InGaZnO channel",

abstract = "In this study, we investigate the impact of orientated crystalline InGaZnO (IGZO) thin film transistor. To evaluate interface thermodynamic stability of temperature-sensitive IGZO film, the film-structural stabilities of high- and low-indium-content InGaZnO were studied. With increasing annealing temperature up to 700 °C, the crystallinity becomes more pronounced while device electrical characteristics are further improved. We find that the apparently reduced off-state current can be attributed to the formation of c-axis-orientated crystalline located at the X-ray diffraction peak of (0, 0, 16). The performance improvements include a very low turn-on voltage close to zero voltage, a small subthreshold swing of 130mV/dec, and a low off-state current of 2.4 × 10-14A/μm at a low operating voltage of 4V.",

author = "Yen, {Shiang Shiou} and Hsu, {Hsiao Hsuan} and Ping Chiou and Cheng, {Chun Hu} and Tung, {Chien Hung} and Lai, {Yu Chien} and Li, {Hung Wei} and Chang, {Chih Pang} and Lu, {Hsueh Hsing} and Chuang, {Ching Sang} and Lin, {Yu Hsin} and Chang, {Chun Yen}",

note = "Publisher Copyright: {\textcopyright} 2015 The Japan Society of Applied Physics.",

year = "2015",

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doi = "10.7567/JJAP.54.04DF05",

language = "English",

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T1 - Structural and electrical characteristics of thin film transistor employing an oriented crystalline InGaZnO channel

AU - Yen, Shiang Shiou

AU - Hsu, Hsiao Hsuan

AU - Chiou, Ping

AU - Cheng, Chun Hu

AU - Tung, Chien Hung

AU - Lai, Yu Chien

AU - Li, Hung Wei

AU - Chang, Chih Pang

AU - Lu, Hsueh Hsing

AU - Chuang, Ching Sang

AU - Lin, Yu Hsin

AU - Chang, Chun Yen

PY - 2015/4/1

Y1 - 2015/4/1

N2 - In this study, we investigate the impact of orientated crystalline InGaZnO (IGZO) thin film transistor. To evaluate interface thermodynamic stability of temperature-sensitive IGZO film, the film-structural stabilities of high- and low-indium-content InGaZnO were studied. With increasing annealing temperature up to 700 °C, the crystallinity becomes more pronounced while device electrical characteristics are further improved. We find that the apparently reduced off-state current can be attributed to the formation of c-axis-orientated crystalline located at the X-ray diffraction peak of (0, 0, 16). The performance improvements include a very low turn-on voltage close to zero voltage, a small subthreshold swing of 130mV/dec, and a low off-state current of 2.4 × 10-14A/μm at a low operating voltage of 4V.

AB - In this study, we investigate the impact of orientated crystalline InGaZnO (IGZO) thin film transistor. To evaluate interface thermodynamic stability of temperature-sensitive IGZO film, the film-structural stabilities of high- and low-indium-content InGaZnO were studied. With increasing annealing temperature up to 700 °C, the crystallinity becomes more pronounced while device electrical characteristics are further improved. We find that the apparently reduced off-state current can be attributed to the formation of c-axis-orientated crystalline located at the X-ray diffraction peak of (0, 0, 16). The performance improvements include a very low turn-on voltage close to zero voltage, a small subthreshold swing of 130mV/dec, and a low off-state current of 2.4 × 10-14A/μm at a low operating voltage of 4V.

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Structural and electrical characteristics of thin film transistor employing an oriented crystalline InGaZnO channel

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