Structural and electrical characteristics of thin film transistor employing an oriented crystalline InGaZnO channel

Shiang Shiou Yen, Hsiao Hsuan Hsu, Ping Chiou, Chun Hu Cheng, Chien Hung Tung, Yu Chien Lai, Hung Wei Li, Chih Pang Chang, Hsueh Hsing Lu, Ching Sang Chuang, Yu Hsin Lin, Chun Yen Chang

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Abstract

In this study, we investigate the impact of orientated crystalline InGaZnO (IGZO) thin film transistor. To evaluate interface thermodynamic stability of temperature-sensitive IGZO film, the film-structural stabilities of high- and low-indium-content InGaZnO were studied. With increasing annealing temperature up to 700 °C, the crystallinity becomes more pronounced while device electrical characteristics are further improved. We find that the apparently reduced off-state current can be attributed to the formation of c-axis-orientated crystalline located at the X-ray diffraction peak of (0, 0, 16). The performance improvements include a very low turn-on voltage close to zero voltage, a small subthreshold swing of 130mV/dec, and a low off-state current of 2.4 × 10-14A/μm at a low operating voltage of 4V.

Original languageEnglish
Article number04DF05
JournalJapanese Journal of Applied Physics
Volume54
Issue number4
DOIs
Publication statusPublished - 2015 Apr 1

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Yen, S. S., Hsu, H. H., Chiou, P., Cheng, C. H., Tung, C. H., Lai, Y. C., Li, H. W., Chang, C. P., Lu, H. H., Chuang, C. S., Lin, Y. H., & Chang, C. Y. (2015). Structural and electrical characteristics of thin film transistor employing an oriented crystalline InGaZnO channel. Japanese Journal of Applied Physics, 54(4), [04DF05]. https://doi.org/10.7567/JJAP.54.04DF05