Strong crystal anisotropy of magneto-transport property in Fe3Si epitaxial film

H. Y. Hung; S. Y. Huang; P. Chang; W. C. Lin; Y. C. Liu; S. F. Lee; M. Hong; J. Kwo

doi:10.1016/j.jcrysgro.2010.11.075

Strong crystal anisotropy of magneto-transport property in Fe₃Si epitaxial film

H. Y. Hung, S. Y. Huang, P. Chang, W. C. Lin, Y. C. Liu, S. F. Lee, M. Hong, J. Kwo

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

This work reports the magneto-anisotropy property of epitaxial Fe ₃Si film grown on GaAs (0 0 1) substrate by molecular beam epitaxy (MBE). We present a strong dependence of anisotropic magnetoresistance (MR) on field in the Fe₃Si film plane. The electron transport behavior is highly dependent on the direction of the current either parallel or perpendicular to the magnetic easy axis. By altering the direction of current from magnetic hard axis to magnetic easy axis, the unconventional behavior switches to normal anisotropic magnetoresistance (AMR). In addition, the anisotropic behaviors were also observed from the magneto-optic Kerr effect (MOKE) measurement, which demonstrates unusual anisotropic properties with the crystalline anisotropic constant K₁=(3.8±0.2)×10 ⁴ erg/cm³ and uni-axial anisotropy K_u=(1. 2±0.04)×10⁴ erg/cm³. The ratio K ₁/K_u was used to account for the MR.

Original language	English
Pages (from-to)	372-375
Number of pages	4
Journal	Journal of Crystal Growth
Volume	323
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2010.11.075
Publication status	Published - 2011 May 15
Externally published	Yes

Keywords

Anisotropic magnetoresistance
FeSi
GaAs
Molecular beam epitaxy
Single crystal growth
Spintronics

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jcrysgro.2010.11.075

Cite this

@article{d1adf6ecf96b4ee1a5dab4e22e248779,

title = "Strong crystal anisotropy of magneto-transport property in Fe3Si epitaxial film",

abstract = "This work reports the magneto-anisotropy property of epitaxial Fe 3Si film grown on GaAs (0 0 1) substrate by molecular beam epitaxy (MBE). We present a strong dependence of anisotropic magnetoresistance (MR) on field in the Fe3Si film plane. The electron transport behavior is highly dependent on the direction of the current either parallel or perpendicular to the magnetic easy axis. By altering the direction of current from magnetic hard axis to magnetic easy axis, the unconventional behavior switches to normal anisotropic magnetoresistance (AMR). In addition, the anisotropic behaviors were also observed from the magneto-optic Kerr effect (MOKE) measurement, which demonstrates unusual anisotropic properties with the crystalline anisotropic constant K1=(3.8±0.2)×10 4 erg/cm3 and uni-axial anisotropy Ku=(1. 2±0.04)×104 erg/cm3. The ratio K 1/Ku was used to account for the MR.",

keywords = "Anisotropic magnetoresistance, FeSi, GaAs, Molecular beam epitaxy, Single crystal growth, Spintronics",

author = "Hung, {H. Y.} and Huang, {S. Y.} and P. Chang and Lin, {W. C.} and Liu, {Y. C.} and Lee, {S. F.} and M. Hong and J. Kwo",

note = "Funding Information: The authors wish to thank the National Science Council of Taiwan for supporting this work under the grant of NSC-96- 2628-M-007-003-MY3 .",

year = "2011",

month = may,

day = "15",

doi = "10.1016/j.jcrysgro.2010.11.075",

language = "English",

volume = "323",

pages = "372--375",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Strong crystal anisotropy of magneto-transport property in Fe3Si epitaxial film

AU - Hung, H. Y.

AU - Huang, S. Y.

AU - Chang, P.

AU - Lin, W. C.

AU - Liu, Y. C.

AU - Lee, S. F.

AU - Hong, M.

AU - Kwo, J.

N1 - Funding Information: The authors wish to thank the National Science Council of Taiwan for supporting this work under the grant of NSC-96- 2628-M-007-003-MY3 .

PY - 2011/5/15

Y1 - 2011/5/15

N2 - This work reports the magneto-anisotropy property of epitaxial Fe 3Si film grown on GaAs (0 0 1) substrate by molecular beam epitaxy (MBE). We present a strong dependence of anisotropic magnetoresistance (MR) on field in the Fe3Si film plane. The electron transport behavior is highly dependent on the direction of the current either parallel or perpendicular to the magnetic easy axis. By altering the direction of current from magnetic hard axis to magnetic easy axis, the unconventional behavior switches to normal anisotropic magnetoresistance (AMR). In addition, the anisotropic behaviors were also observed from the magneto-optic Kerr effect (MOKE) measurement, which demonstrates unusual anisotropic properties with the crystalline anisotropic constant K1=(3.8±0.2)×10 4 erg/cm3 and uni-axial anisotropy Ku=(1. 2±0.04)×104 erg/cm3. The ratio K 1/Ku was used to account for the MR.

AB - This work reports the magneto-anisotropy property of epitaxial Fe 3Si film grown on GaAs (0 0 1) substrate by molecular beam epitaxy (MBE). We present a strong dependence of anisotropic magnetoresistance (MR) on field in the Fe3Si film plane. The electron transport behavior is highly dependent on the direction of the current either parallel or perpendicular to the magnetic easy axis. By altering the direction of current from magnetic hard axis to magnetic easy axis, the unconventional behavior switches to normal anisotropic magnetoresistance (AMR). In addition, the anisotropic behaviors were also observed from the magneto-optic Kerr effect (MOKE) measurement, which demonstrates unusual anisotropic properties with the crystalline anisotropic constant K1=(3.8±0.2)×10 4 erg/cm3 and uni-axial anisotropy Ku=(1. 2±0.04)×104 erg/cm3. The ratio K 1/Ku was used to account for the MR.

KW - Anisotropic magnetoresistance

KW - FeSi

KW - GaAs

KW - Molecular beam epitaxy

KW - Single crystal growth

KW - Spintronics

UR - http://www.scopus.com/inward/record.url?scp=79958015537&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79958015537&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2010.11.075

DO - 10.1016/j.jcrysgro.2010.11.075

M3 - Article

AN - SCOPUS:79958015537

SN - 0022-0248

VL - 323

SP - 372

EP - 375

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -