Stress distribution of IGZO TFTs under mechanical rolling using finite element method for flexible applications

M. H. Lee; S. M. Hsu; J. D. Shen; C. Liu

doi:10.1016/j.mee.2015.02.020

Stress distribution of IGZO TFTs under mechanical rolling using finite element method for flexible applications

M. H. Lee^*
, S. M. Hsu
, J. D. Shen
, C. Liu

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

The stress analysis of IGZO TFT in structures, dielectrics, and rolling curvatures using finite element method is proposed. The inverted-coplanar with SiO_x has the smallest stress for mechanical rolling. The local extreme stress would also induce film cracks or peeling at the corner. For example, inverted-coplanar structure has the maximum stress at the corner of IGZO/Al with -0.65 GPa (x-direction stress), -0.22 GPa (y-direction stress), and -0.21 GPa (shear stress). The stress of IGZO TFT with high PPI under mechanical rolling is also discussed.

Original language	English
Pages (from-to)	77-80
Number of pages	4
Journal	Microelectronic Engineering
Volume	138
DOIs	https://doi.org/10.1016/j.mee.2015.02.020
Publication status	Published - 2015 Apr 20

Keywords

Flexible
IGZO TFT
Stress

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1016/j.mee.2015.02.020

Cite this

@article{c4a91cca9dfb41c5a55fce8222a7f75e,

title = "Stress distribution of IGZO TFTs under mechanical rolling using finite element method for flexible applications",

abstract = "The stress analysis of IGZO TFT in structures, dielectrics, and rolling curvatures using finite element method is proposed. The inverted-coplanar with SiOx has the smallest stress for mechanical rolling. The local extreme stress would also induce film cracks or peeling at the corner. For example, inverted-coplanar structure has the maximum stress at the corner of IGZO/Al with -0.65 GPa (x-direction stress), -0.22 GPa (y-direction stress), and -0.21 GPa (shear stress). The stress of IGZO TFT with high PPI under mechanical rolling is also discussed.",

keywords = "Flexible, IGZO TFT, Stress",

author = "Lee, \{M. H.\} and Hsu, \{S. M.\} and Shen, \{J. D.\} and C. Liu",

year = "2015",

month = apr,

day = "20",

doi = "10.1016/j.mee.2015.02.020",

language = "English",

volume = "138",

pages = "77--80",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier BV",

}

TY - JOUR

T1 - Stress distribution of IGZO TFTs under mechanical rolling using finite element method for flexible applications

AU - Lee, M. H.

AU - Hsu, S. M.

AU - Shen, J. D.

AU - Liu, C.

PY - 2015/4/20

Y1 - 2015/4/20

N2 - The stress analysis of IGZO TFT in structures, dielectrics, and rolling curvatures using finite element method is proposed. The inverted-coplanar with SiOx has the smallest stress for mechanical rolling. The local extreme stress would also induce film cracks or peeling at the corner. For example, inverted-coplanar structure has the maximum stress at the corner of IGZO/Al with -0.65 GPa (x-direction stress), -0.22 GPa (y-direction stress), and -0.21 GPa (shear stress). The stress of IGZO TFT with high PPI under mechanical rolling is also discussed.

AB - The stress analysis of IGZO TFT in structures, dielectrics, and rolling curvatures using finite element method is proposed. The inverted-coplanar with SiOx has the smallest stress for mechanical rolling. The local extreme stress would also induce film cracks or peeling at the corner. For example, inverted-coplanar structure has the maximum stress at the corner of IGZO/Al with -0.65 GPa (x-direction stress), -0.22 GPa (y-direction stress), and -0.21 GPa (shear stress). The stress of IGZO TFT with high PPI under mechanical rolling is also discussed.

KW - Flexible

KW - IGZO TFT

KW - Stress

UR - https://www.scopus.com/pages/publications/84923782284

UR - https://www.scopus.com/pages/publications/84923782284#tab=citedBy

U2 - 10.1016/j.mee.2015.02.020

DO - 10.1016/j.mee.2015.02.020

M3 - Article

AN - SCOPUS:84923782284

SN - 0167-9317

VL - 138

SP - 77

EP - 80

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Stress distribution of IGZO TFTs under mechanical rolling using finite element method for flexible applications

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this