Stress distribution of IGZO TFTs under mechanical rolling using finite element method for flexible applications

M. H. Lee, S. M. Hsu, J. D. Shen, C. Liu

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The stress analysis of IGZO TFT in structures, dielectrics, and rolling curvatures using finite element method is proposed. The inverted-coplanar with SiOx has the smallest stress for mechanical rolling. The local extreme stress would also induce film cracks or peeling at the corner. For example, inverted-coplanar structure has the maximum stress at the corner of IGZO/Al with -0.65 GPa (x-direction stress), -0.22 GPa (y-direction stress), and -0.21 GPa (shear stress). The stress of IGZO TFT with high PPI under mechanical rolling is also discussed.

Original languageEnglish
Pages (from-to)77-80
Number of pages4
JournalMicroelectronic Engineering
Volume138
DOIs
Publication statusPublished - 2015 Apr 20

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Keywords

  • Flexible
  • IGZO TFT
  • Stress

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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