Stress distribution of IGZO TFTs under mechanical rolling using finite element method for flexible applications

M. H. Lee, S. M. Hsu, J. D. Shen, C. Liu

    Research output: Contribution to journalArticlepeer-review

    15 Citations (Scopus)

    Abstract

    The stress analysis of IGZO TFT in structures, dielectrics, and rolling curvatures using finite element method is proposed. The inverted-coplanar with SiOx has the smallest stress for mechanical rolling. The local extreme stress would also induce film cracks or peeling at the corner. For example, inverted-coplanar structure has the maximum stress at the corner of IGZO/Al with -0.65 GPa (x-direction stress), -0.22 GPa (y-direction stress), and -0.21 GPa (shear stress). The stress of IGZO TFT with high PPI under mechanical rolling is also discussed.

    Original languageEnglish
    Pages (from-to)77-80
    Number of pages4
    JournalMicroelectronic Engineering
    Volume138
    DOIs
    Publication statusPublished - 2015 Apr 20

    Keywords

    • Flexible
    • IGZO TFT
    • Stress

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Condensed Matter Physics
    • Surfaces, Coatings and Films
    • Electrical and Electronic Engineering

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