Strained Si_1-xC_x field effect transistor on SiGe substrate

We propose for the first time the tensile-strained Si_1-xC _x channel on SiGe substrate CMOS devices. Theoretical calculations show enhancement of both electron and hole mobilities in strained Si _1-xC_x on SiGe substrates as compared to Si. Furthermore, the added carbon can reduce outdiffusion of boron and phosphorous, so that the source/drain junction and channel has an abrupt doping distribution, preventing short-channel effect and minimizing device dimensions. With the benefit of strain in Si_1-xC_x alloy being more significant than in silicon, the MOSFET structure according to the idea uses Si_1-xC _x instead, providing better symmetry of the designed current driving force and speed, minimizing the device scale and enhancing the current driving force.