Abstract
We propose for the first time the tensile-strained Si1-xC x channel on SiGe substrate CMOS devices. Theoretical calculations show enhancement of both electron and hole mobilities in strained Si 1-xCx on SiGe substrates as compared to Si. Furthermore, the added carbon can reduce outdiffusion of boron and phosphorous, so that the source/drain junction and channel has an abrupt doping distribution, preventing short-channel effect and minimizing device dimensions. With the benefit of strain in Si1-xCx alloy being more significant than in silicon, the MOSFET structure according to the idea uses Si1-xC x instead, providing better symmetry of the designed current driving force and speed, minimizing the device scale and enhancing the current driving force.
Original language | English |
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Pages | 363-373 |
Number of pages | 11 |
Publication status | Published - 2004 |
Externally published | Yes |
Event | SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States Duration: 2004 Oct 3 → 2004 Oct 8 |
Other
Other | SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium |
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Country/Territory | United States |
City | Honolulu, HI |
Period | 2004/10/03 → 2004/10/08 |
ASJC Scopus subject areas
- General Engineering