Strained Si1-xCx field effect transistor on SiGe substrate

S. T. Chang, Min-Hung Lee, S. C. Lu, C. W. Liu

Research output: Contribution to conferencePaper

Abstract

We propose for the first time the tensile-strained Si1-xC x channel on SiGe substrate CMOS devices. Theoretical calculations show enhancement of both electron and hole mobilities in strained Si 1-xCx on SiGe substrates as compared to Si. Furthermore, the added carbon can reduce outdiffusion of boron and phosphorous, so that the source/drain junction and channel has an abrupt doping distribution, preventing short-channel effect and minimizing device dimensions. With the benefit of strain in Si1-xCx alloy being more significant than in silicon, the MOSFET structure according to the idea uses Si1-xC x instead, providing better symmetry of the designed current driving force and speed, minimizing the device scale and enhancing the current driving force.

Original languageEnglish
Pages363-373
Number of pages11
Publication statusPublished - 2004 Dec 1
EventSiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States
Duration: 2004 Oct 32004 Oct 8

Other

OtherSiGe: Materials, Processing, and Devices - Proceedings of the First Symposium
CountryUnited States
CityHonolulu, HI
Period04/10/304/10/8

Fingerprint

Field effect transistors
Hole mobility
Electron mobility
Substrates
Boron
Doping (additives)
Silicon
Carbon

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Chang, S. T., Lee, M-H., Lu, S. C., & Liu, C. W. (2004). Strained Si1-xCx field effect transistor on SiGe substrate. 363-373. Paper presented at SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium, Honolulu, HI, United States.

Strained Si1-xCx field effect transistor on SiGe substrate. / Chang, S. T.; Lee, Min-Hung; Lu, S. C.; Liu, C. W.

2004. 363-373 Paper presented at SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium, Honolulu, HI, United States.

Research output: Contribution to conferencePaper

Chang, ST, Lee, M-H, Lu, SC & Liu, CW 2004, 'Strained Si1-xCx field effect transistor on SiGe substrate' Paper presented at SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium, Honolulu, HI, United States, 04/10/3 - 04/10/8, pp. 363-373.
Chang ST, Lee M-H, Lu SC, Liu CW. Strained Si1-xCx field effect transistor on SiGe substrate. 2004. Paper presented at SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium, Honolulu, HI, United States.
Chang, S. T. ; Lee, Min-Hung ; Lu, S. C. ; Liu, C. W. / Strained Si1-xCx field effect transistor on SiGe substrate. Paper presented at SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium, Honolulu, HI, United States.11 p.
@conference{7875734f7d8e463a8902b6e7f946549c,
title = "Strained Si1-xCx field effect transistor on SiGe substrate",
abstract = "We propose for the first time the tensile-strained Si1-xC x channel on SiGe substrate CMOS devices. Theoretical calculations show enhancement of both electron and hole mobilities in strained Si 1-xCx on SiGe substrates as compared to Si. Furthermore, the added carbon can reduce outdiffusion of boron and phosphorous, so that the source/drain junction and channel has an abrupt doping distribution, preventing short-channel effect and minimizing device dimensions. With the benefit of strain in Si1-xCx alloy being more significant than in silicon, the MOSFET structure according to the idea uses Si1-xC x instead, providing better symmetry of the designed current driving force and speed, minimizing the device scale and enhancing the current driving force.",
author = "Chang, {S. T.} and Min-Hung Lee and Lu, {S. C.} and Liu, {C. W.}",
year = "2004",
month = "12",
day = "1",
language = "English",
pages = "363--373",
note = "SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium ; Conference date: 03-10-2004 Through 08-10-2004",

}

TY - CONF

T1 - Strained Si1-xCx field effect transistor on SiGe substrate

AU - Chang, S. T.

AU - Lee, Min-Hung

AU - Lu, S. C.

AU - Liu, C. W.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - We propose for the first time the tensile-strained Si1-xC x channel on SiGe substrate CMOS devices. Theoretical calculations show enhancement of both electron and hole mobilities in strained Si 1-xCx on SiGe substrates as compared to Si. Furthermore, the added carbon can reduce outdiffusion of boron and phosphorous, so that the source/drain junction and channel has an abrupt doping distribution, preventing short-channel effect and minimizing device dimensions. With the benefit of strain in Si1-xCx alloy being more significant than in silicon, the MOSFET structure according to the idea uses Si1-xC x instead, providing better symmetry of the designed current driving force and speed, minimizing the device scale and enhancing the current driving force.

AB - We propose for the first time the tensile-strained Si1-xC x channel on SiGe substrate CMOS devices. Theoretical calculations show enhancement of both electron and hole mobilities in strained Si 1-xCx on SiGe substrates as compared to Si. Furthermore, the added carbon can reduce outdiffusion of boron and phosphorous, so that the source/drain junction and channel has an abrupt doping distribution, preventing short-channel effect and minimizing device dimensions. With the benefit of strain in Si1-xCx alloy being more significant than in silicon, the MOSFET structure according to the idea uses Si1-xC x instead, providing better symmetry of the designed current driving force and speed, minimizing the device scale and enhancing the current driving force.

UR - http://www.scopus.com/inward/record.url?scp=17044416934&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17044416934&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:17044416934

SP - 363

EP - 373

ER -