Strained Si1-xCx field effect transistor on SiGe substrate

S. T. Chang, Min-Hung Lee, S. C. Lu, C. W. Liu

Research output: Contribution to conferencePaper

Abstract

We propose for the first time the tensile-strained Si1-xC x channel on SiGe substrate CMOS devices. Theoretical calculations show enhancement of both electron and hole mobilities in strained Si 1-xCx on SiGe substrates as compared to Si. Furthermore, the added carbon can reduce outdiffusion of boron and phosphorous, so that the source/drain junction and channel has an abrupt doping distribution, preventing short-channel effect and minimizing device dimensions. With the benefit of strain in Si1-xCx alloy being more significant than in silicon, the MOSFET structure according to the idea uses Si1-xC x instead, providing better symmetry of the designed current driving force and speed, minimizing the device scale and enhancing the current driving force.

Original languageEnglish
Pages363-373
Number of pages11
Publication statusPublished - 2004 Dec 1
EventSiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States
Duration: 2004 Oct 32004 Oct 8

Other

OtherSiGe: Materials, Processing, and Devices - Proceedings of the First Symposium
CountryUnited States
CityHonolulu, HI
Period04/10/304/10/8

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Chang, S. T., Lee, M-H., Lu, S. C., & Liu, C. W. (2004). Strained Si1-xCx field effect transistor on SiGe substrate. 363-373. Paper presented at SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium, Honolulu, HI, United States.