We propose for the first time the tensile-strained Si1-xC x channel on SiGe substrate CMOS devices. Theoretical calculations show enhancement of both electron and hole mobilities in strained Si 1-xCx on SiGe substrates as compared to Si. Furthermore, the added carbon can reduce outdiffusion of boron and phosphorous, so that the source/drain junction and channel has an abrupt doping distribution, preventing short-channel effect and minimizing device dimensions. With the benefit of strain in Si1-xCx alloy being more significant than in silicon, the MOSFET structure according to the idea uses Si1-xC x instead, providing better symmetry of the designed current driving force and speed, minimizing the device scale and enhancing the current driving force.
|Number of pages||11|
|Publication status||Published - 2004 Dec 1|
|Event||SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States|
Duration: 2004 Oct 3 → 2004 Oct 8
|Other||SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium|
|Period||04/10/3 → 04/10/8|
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