Strained-Si:C-source/drain NMOSFETs for channel strain enhancement

M. H. Lee, S. T. Chang, C. F. Huang, S. Maikap, K. W. Shen, R. S. Syu, Y. T. Liu

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Fingerprint Dive into the research topics of 'Strained-Si:C-source/drain NMOSFETs for channel strain enhancement'. Together they form a unique fingerprint.