Strained-Si:C-source/drain NMOSFETs for channel strain enhancement

M. H. Lee; S. T. Chang; C. F. Huang; S. Maikap; K. W. Shen; R. S. Syu; Y. T. Liu

doi:10.1109/ISDRS.2007.4422399

Strained-Si:C-source/drain NMOSFETs for channel strain enhancement

M. H. Lee, S. T. Chang, C. F. Huang, S. Maikap, K. W. Shen, R. S. Syu, Y. T. Liu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	2007 International Semiconductor Device Research Symposium, ISDRS
DOIs	https://doi.org/10.1109/ISDRS.2007.4422399
Publication status	Published - 2007 Dec 1
Event	2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States Duration: 2007 Dec 12 → 2007 Dec 14

Publication series

Name	2007 International Semiconductor Device Research Symposium, ISDRS

Other

Other	2007 International Semiconductor Device Research Symposium, ISDRS
Country	United States
City	College Park, MD
Period	2007/12/12 → 2007/12/14

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ISDRS.2007.4422399

Cite this

Strained-Si:C-source/drain NMOSFETs for channel strain enhancement. / Lee, M. H.; Chang, S. T.; Huang, C. F.; Maikap, S.; Shen, K. W.; Syu, R. S.; Liu, Y. T.

2007 International Semiconductor Device Research Symposium, ISDRS. 2007. 4422399 (2007 International Semiconductor Device Research Symposium, ISDRS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lee, MH, Chang, ST, Huang, CF, Maikap, S, Shen, KW, Syu, RS & Liu, YT 2007, Strained-Si:C-source/drain NMOSFETs for channel strain enhancement. in 2007 International Semiconductor Device Research Symposium, ISDRS., 4422399, 2007 International Semiconductor Device Research Symposium, ISDRS, 2007 International Semiconductor Device Research Symposium, ISDRS, College Park, MD, United States, 2007/12/12. https://doi.org/10.1109/ISDRS.2007.4422399

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title = "Strained-Si:C-source/drain NMOSFETs for channel strain enhancement",

author = "Lee, {M. H.} and Chang, {S. T.} and Huang, {C. F.} and S. Maikap and Shen, {K. W.} and Syu, {R. S.} and Liu, {Y. T.}",

year = "2007",

month = dec,

day = "1",

doi = "10.1109/ISDRS.2007.4422399",

language = "English",

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T1 - Strained-Si:C-source/drain NMOSFETs for channel strain enhancement

AU - Lee, M. H.

AU - Chang, S. T.

AU - Huang, C. F.

AU - Maikap, S.

AU - Shen, K. W.

AU - Syu, R. S.

AU - Liu, Y. T.

PY - 2007/12/1

Y1 - 2007/12/1

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U2 - 10.1109/ISDRS.2007.4422399

DO - 10.1109/ISDRS.2007.4422399

M3 - Conference contribution

AN - SCOPUS:44949145383

SN - 1424418917

SN - 9781424418916

T3 - 2007 International Semiconductor Device Research Symposium, ISDRS

BT - 2007 International Semiconductor Device Research Symposium, ISDRS

T2 - 2007 International Semiconductor Device Research Symposium, ISDRS

Y2 - 12 December 2007 through 14 December 2007

ER -

Strained-Si:C-source/drain NMOSFETs for channel strain enhancement

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Other

ASJC Scopus subject areas

Access to Document

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