Strained-Si:C-source/drain NMOSFETs for channel strain enhancement

M. H. Lee; S. T. Chang; C. F. Huang; S. Maikap; K. W. Shen; R. S. Syu; Y. T. Liu

doi:10.1109/ISDRS.2007.4422399

Strained-Si:C-source/drain NMOSFETs for channel strain enhancement

M. H. Lee, S. T. Chang, C. F. Huang, S. Maikap, K. W. Shen, R. S. Syu, Y. T. Liu

Graduate Institute of Electro-Optical Science And Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	2007 International Semiconductor Device Research Symposium, ISDRS
DOIs	https://doi.org/10.1109/ISDRS.2007.4422399
Publication status	Published - 2007 Dec 1
Event	2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States Duration: 2007 Dec 12 → 2007 Dec 14

Publication series

Name	2007 International Semiconductor Device Research Symposium, ISDRS

Other

Other	2007 International Semiconductor Device Research Symposium, ISDRS
Country	United States
City	College Park, MD
Period	07/12/12 → 07/12/14

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Cite this

Lee, M. H., Chang, S. T., Huang, C. F., Maikap, S., Shen, K. W., Syu, R. S., & Liu, Y. T. (2007). Strained-Si:C-source/drain NMOSFETs for channel strain enhancement. In 2007 International Semiconductor Device Research Symposium, ISDRS [4422399] (2007 International Semiconductor Device Research Symposium, ISDRS). https://doi.org/10.1109/ISDRS.2007.4422399

Strained-Si:C-source/drain NMOSFETs for channel strain enhancement. / Lee, M. H.; Chang, S. T.; Huang, C. F.; Maikap, S.; Shen, K. W.; Syu, R. S.; Liu, Y. T.

2007 International Semiconductor Device Research Symposium, ISDRS. 2007. 4422399 (2007 International Semiconductor Device Research Symposium, ISDRS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lee, MH, Chang, ST, Huang, CF, Maikap, S, Shen, KW, Syu, RS & Liu, YT 2007, Strained-Si:C-source/drain NMOSFETs for channel strain enhancement. in 2007 International Semiconductor Device Research Symposium, ISDRS., 4422399, 2007 International Semiconductor Device Research Symposium, ISDRS, 2007 International Semiconductor Device Research Symposium, ISDRS, College Park, MD, United States, 07/12/12. https://doi.org/10.1109/ISDRS.2007.4422399

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Access to Document

10.1109/ISDRS.2007.4422399