Strained-Si:C-source/drain NMOSFETs for channel strain enhancement

M. H. Lee, S. T. Chang, C. F. Huang, S. Maikap, K. W. Shen, R. S. Syu, Y. T. Liu

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Original languageEnglish
    Title of host publication2007 International Semiconductor Device Research Symposium, ISDRS
    DOIs
    Publication statusPublished - 2007 Dec 1
    Event2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States
    Duration: 2007 Dec 122007 Dec 14

    Publication series

    Name2007 International Semiconductor Device Research Symposium, ISDRS

    Other

    Other2007 International Semiconductor Device Research Symposium, ISDRS
    CountryUnited States
    CityCollege Park, MD
    Period2007/12/122007/12/14

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials

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