Strained-Si:C-source/drain NMOSFETs for channel strain enhancement

M. H. Lee, S. T. Chang, C. F. Huang, S. Maikap, K. W. Shen, R. S. Syu, Y. T. Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publication2007 International Semiconductor Device Research Symposium, ISDRS
DOIs
Publication statusPublished - 2007 Dec 1
Event2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States
Duration: 2007 Dec 122007 Dec 14

Publication series

Name2007 International Semiconductor Device Research Symposium, ISDRS

Other

Other2007 International Semiconductor Device Research Symposium, ISDRS
CountryUnited States
CityCollege Park, MD
Period07/12/1207/12/14

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Lee, M. H., Chang, S. T., Huang, C. F., Maikap, S., Shen, K. W., Syu, R. S., & Liu, Y. T. (2007). Strained-Si:C-source/drain NMOSFETs for channel strain enhancement. In 2007 International Semiconductor Device Research Symposium, ISDRS [4422399] (2007 International Semiconductor Device Research Symposium, ISDRS). https://doi.org/10.1109/ISDRS.2007.4422399