Strained-Si:C-source/drain NMOSFETs for channel strain enhancement

M. H. Lee, S. T. Chang, C. F. Huang, S. Maikap, K. W. Shen, R. S. Syu, Y. T. Liu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original languageEnglish
Title of host publication2007 International Semiconductor Device Research Symposium, ISDRS
DOIs
Publication statusPublished - 2007 Dec 1
Event2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States
Duration: 2007 Dec 12 → 2007 Dec 14

Publication series

Name2007 International Semiconductor Device Research Symposium, ISDRS

Other

Other2007 International Semiconductor Device Research Symposium, ISDRS
CountryUnited States
CityCollege Park, MD
Period07/12/12 → 07/12/14

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Lee, M. H., Chang, S. T., Huang, C. F., Maikap, S., Shen, K. W., Syu, R. S., & Liu, Y. T. (2007). Strained-Si:C-source/drain NMOSFETs for channel strain enhancement. In 2007 International Semiconductor Device Research Symposium, ISDRS [4422399] (2007 International Semiconductor Device Research Symposium, ISDRS). https://doi.org/10.1109/ISDRS.2007.4422399

Strained-Si:C-source/drain NMOSFETs for channel strain enhancement. / Lee, M. H.; Chang, S. T.; Huang, C. F.; Maikap, S.; Shen, K. W.; Syu, R. S.; Liu, Y. T.

2007 International Semiconductor Device Research Symposium, ISDRS. 2007. 4422399 (2007 International Semiconductor Device Research Symposium, ISDRS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lee, MH, Chang, ST, Huang, CF, Maikap, S, Shen, KW, Syu, RS & Liu, YT 2007, Strained-Si:C-source/drain NMOSFETs for channel strain enhancement. in 2007 International Semiconductor Device Research Symposium, ISDRS., 4422399, 2007 International Semiconductor Device Research Symposium, ISDRS, 2007 International Semiconductor Device Research Symposium, ISDRS, College Park, MD, United States, 07/12/12. https://doi.org/10.1109/ISDRS.2007.4422399
Lee MH, Chang ST, Huang CF, Maikap S, Shen KW, Syu RS et al. Strained-Si:C-source/drain NMOSFETs for channel strain enhancement. In 2007 International Semiconductor Device Research Symposium, ISDRS. 2007. 4422399. (2007 International Semiconductor Device Research Symposium, ISDRS). https://doi.org/10.1109/ISDRS.2007.4422399
Lee, M. H. ; Chang, S. T. ; Huang, C. F. ; Maikap, S. ; Shen, K. W. ; Syu, R. S. ; Liu, Y. T. / Strained-Si:C-source/drain NMOSFETs for channel strain enhancement. 2007 International Semiconductor Device Research Symposium, ISDRS. 2007. (2007 International Semiconductor Device Research Symposium, ISDRS).
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