Strained-Si with carbon incorporation for MOSFET source/drain engineering

M. H. Lee*, S. T. Chang, S. W. Lee, P. S. Chen, K. W. Shen, W. C. Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


The carbon incorporation in strained-Si source/drain of MOSFET is demonstrated. The methylsilane (CH 3 SiH 3 ) is chosen as the carbon precursor to make high percentage of substitutional carbon, and less defects by interstitials and vacancies. The large D it at oxide/strained-Si:C interface degrades the expected carrier mobility enhancement, but improvement is observed after forming gas annealing. The strained-Si source/drain with carbon incorporation is not only being stressor but also lower R s , and make a potential candidate for future high-speed ballistic devices beyond 10 nm technology node.

Original languageEnglish
Pages (from-to)6147-6150
Number of pages4
JournalApplied Surface Science
Issue number19
Publication statusPublished - 2008 Jul 30


  • Methysilane
  • Strain
  • Strained-Si:C

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • General Physics and Astronomy
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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