Strained-Si with carbon incorporation for MOSFET source/drain engineering

M. H. Lee, S. T. Chang, S. W. Lee, P. S. Chen, K. W. Shen, W. C. Wang

    Research output: Contribution to journalArticlepeer-review

    3 Citations (Scopus)

    Abstract

    The carbon incorporation in strained-Si source/drain of MOSFET is demonstrated. The methylsilane (CH 3 SiH 3 ) is chosen as the carbon precursor to make high percentage of substitutional carbon, and less defects by interstitials and vacancies. The large D it at oxide/strained-Si:C interface degrades the expected carrier mobility enhancement, but improvement is observed after forming gas annealing. The strained-Si source/drain with carbon incorporation is not only being stressor but also lower R s , and make a potential candidate for future high-speed ballistic devices beyond 10 nm technology node.

    Original languageEnglish
    Pages (from-to)6147-6150
    Number of pages4
    JournalApplied Surface Science
    Volume254
    Issue number19
    DOIs
    Publication statusPublished - 2008 Jul 30

    Keywords

    • Methysilane
    • Strain
    • Strained-Si:C

    ASJC Scopus subject areas

    • Chemistry(all)
    • Condensed Matter Physics
    • Physics and Astronomy(all)
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films

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