Strained-Si with carbon incorporation for MOSFET source/drain engineering

M. H. Lee, S. T. Chang, S. W. Lee, P. S. Chen, K. W. Shen, W. C. Wang

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3 Citations (Scopus)

Abstract

The carbon incorporation in strained-Si source/drain of MOSFET is demonstrated. The methylsilane (CH 3 SiH 3 ) is chosen as the carbon precursor to make high percentage of substitutional carbon, and less defects by interstitials and vacancies. The large D it at oxide/strained-Si:C interface degrades the expected carrier mobility enhancement, but improvement is observed after forming gas annealing. The strained-Si source/drain with carbon incorporation is not only being stressor but also lower R s , and make a potential candidate for future high-speed ballistic devices beyond 10 nm technology node.

Original languageEnglish
Pages (from-to)6147-6150
Number of pages4
JournalApplied Surface Science
Volume254
Issue number19
DOIs
Publication statusPublished - 2008 Jul 30

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Keywords

  • Methysilane
  • Strain
  • Strained-Si:C

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Lee, M. H., Chang, S. T., Lee, S. W., Chen, P. S., Shen, K. W., & Wang, W. C. (2008). Strained-Si with carbon incorporation for MOSFET source/drain engineering. Applied Surface Science, 254(19), 6147-6150. https://doi.org/10.1016/j.apsusc.2008.02.179