Strained pMOSFETs with SiGe channel and embedded SiGe source/drain stressor under heating and hot-carrier stresses

Mu Chun Wang; Min Ru Peng; Liang Ru Ji; Heng Sheng Huang; Shuang Yuan Chen; Shea Jue Wang; Hong Wen Hsu; Wen Shiang Liao; Chuan Hsi Liu

doi:10.1109/ISNE.2013.6512370

Strained pMOSFETs with SiGe channel and embedded SiGe source/drain stressor under heating and hot-carrier stresses

Mu Chun Wang, Min Ru Peng, Liang Ru Ji, Heng Sheng Huang, Shuang Yuan Chen, Shea Jue Wang^*, Hong Wen Hsu, Wen Shiang Liao, Chuan Hsi Liu

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to conference › Paper › peer-review

2 Citations (Scopus)

Abstract

Reported literatures have investigated the effects of pMOSFETs with embedded SiGe source/drain stressor, but devices incorporated with biaxial strain and embedded SiGe source/drain has not been clearly probed. In this study, the characteristics of devices containing biaxial strain and embedded SiGe source/drain stressor as well as different channel lengths were explored. According to the experimental results at high temperature stress, the saturation current of the embedded SiGe source/drain pMOSFETs degraded 5.5%, which was more serious than Si-control devices' 4.8% degradation. It is presumable that embedded SiGe source/drain induces more traps or interface states on the channel surface. In the channel hot carrier stress, the worst case in current degradation also demonstrated the identical trend.

Original language	English
Pages	371-374
Number of pages	4
DOIs	https://doi.org/10.1109/ISNE.2013.6512370
Publication status	Published - 2013
Event	2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 - Kaohsiung, Taiwan Duration: 2013 Feb 25 → 2013 Feb 26

Other

Other	2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013
Country/Territory	Taiwan
City	Kaohsiung
Period	2013/02/25 → 2013/02/26

Keywords

SiGe channel
biaxial stain
hot carrier effect
mobility
strained silicon
threshold voltage

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ISNE.2013.6512370

Cite this

Wang, M. C., Peng, M. R., Ji, L. R., Huang, H. S., Chen, S. Y., Wang, S. J., Hsu, H. W., Liao, W. S., & Liu, C. H. (2013). Strained pMOSFETs with SiGe channel and embedded SiGe source/drain stressor under heating and hot-carrier stresses. 371-374. Paper presented at 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, Taiwan. https://doi.org/10.1109/ISNE.2013.6512370

Wang, MC, Peng, MR, Ji, LR, Huang, HS, Chen, SY, Wang, SJ, Hsu, HW, Liao, WS & Liu, CH 2013, 'Strained pMOSFETs with SiGe channel and embedded SiGe source/drain stressor under heating and hot-carrier stresses', Paper presented at 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, Taiwan, 2013/02/25 - 2013/02/26 pp. 371-374. https://doi.org/10.1109/ISNE.2013.6512370

@conference{30ce5ee87af94efbaea6399acb0bf071,

title = "Strained pMOSFETs with SiGe channel and embedded SiGe source/drain stressor under heating and hot-carrier stresses",

abstract = "Reported literatures have investigated the effects of pMOSFETs with embedded SiGe source/drain stressor, but devices incorporated with biaxial strain and embedded SiGe source/drain has not been clearly probed. In this study, the characteristics of devices containing biaxial strain and embedded SiGe source/drain stressor as well as different channel lengths were explored. According to the experimental results at high temperature stress, the saturation current of the embedded SiGe source/drain pMOSFETs degraded 5.5%, which was more serious than Si-control devices' 4.8% degradation. It is presumable that embedded SiGe source/drain induces more traps or interface states on the channel surface. In the channel hot carrier stress, the worst case in current degradation also demonstrated the identical trend.",

keywords = "SiGe channel, biaxial stain, hot carrier effect, mobility, strained silicon, threshold voltage",

author = "Wang, {Mu Chun} and Peng, {Min Ru} and Ji, {Liang Ru} and Huang, {Heng Sheng} and Chen, {Shuang Yuan} and Wang, {Shea Jue} and Hsu, {Hong Wen} and Liao, {Wen Shiang} and Liu, {Chuan Hsi}",

year = "2013",

doi = "10.1109/ISNE.2013.6512370",

language = "English",

pages = "371--374",

note = "2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 ; Conference date: 25-02-2013 Through 26-02-2013",

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AU - Wang, Mu Chun

AU - Peng, Min Ru

AU - Ji, Liang Ru

AU - Huang, Heng Sheng

AU - Chen, Shuang Yuan

AU - Wang, Shea Jue

AU - Hsu, Hong Wen

AU - Liao, Wen Shiang

AU - Liu, Chuan Hsi

PY - 2013

Y1 - 2013

N2 - Reported literatures have investigated the effects of pMOSFETs with embedded SiGe source/drain stressor, but devices incorporated with biaxial strain and embedded SiGe source/drain has not been clearly probed. In this study, the characteristics of devices containing biaxial strain and embedded SiGe source/drain stressor as well as different channel lengths were explored. According to the experimental results at high temperature stress, the saturation current of the embedded SiGe source/drain pMOSFETs degraded 5.5%, which was more serious than Si-control devices' 4.8% degradation. It is presumable that embedded SiGe source/drain induces more traps or interface states on the channel surface. In the channel hot carrier stress, the worst case in current degradation also demonstrated the identical trend.

AB - Reported literatures have investigated the effects of pMOSFETs with embedded SiGe source/drain stressor, but devices incorporated with biaxial strain and embedded SiGe source/drain has not been clearly probed. In this study, the characteristics of devices containing biaxial strain and embedded SiGe source/drain stressor as well as different channel lengths were explored. According to the experimental results at high temperature stress, the saturation current of the embedded SiGe source/drain pMOSFETs degraded 5.5%, which was more serious than Si-control devices' 4.8% degradation. It is presumable that embedded SiGe source/drain induces more traps or interface states on the channel surface. In the channel hot carrier stress, the worst case in current degradation also demonstrated the identical trend.

KW - SiGe channel

KW - biaxial stain

KW - hot carrier effect

KW - mobility

KW - strained silicon

KW - threshold voltage

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T2 - 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013

Y2 - 25 February 2013 through 26 February 2013

ER -

Strained pMOSFETs with SiGe channel and embedded SiGe source/drain stressor under heating and hot-carrier stresses

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