Strained pMOSFETs with SiGe channel and embedded SiGe source/drain stressor under heating and hot-carrier stresses

Mu Chun Wang, Min Ru Peng, Liang Ru Ji, Heng Sheng Huang, Shuang Yuan Chen, Shea Jue Wang, Hong Wen Hsu, Wen Shiang Liao, Chuan-Hsi Liu

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

Reported literatures have investigated the effects of pMOSFETs with embedded SiGe source/drain stressor, but devices incorporated with biaxial strain and embedded SiGe source/drain has not been clearly probed. In this study, the characteristics of devices containing biaxial strain and embedded SiGe source/drain stressor as well as different channel lengths were explored. According to the experimental results at high temperature stress, the saturation current of the embedded SiGe source/drain pMOSFETs degraded 5.5%, which was more serious than Si-control devices' 4.8% degradation. It is presumable that embedded SiGe source/drain induces more traps or interface states on the channel surface. In the channel hot carrier stress, the worst case in current degradation also demonstrated the identical trend.

Original languageEnglish
Pages371-374
Number of pages4
DOIs
Publication statusPublished - 2013 May 27
Event2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 - Kaohsiung, Taiwan
Duration: 2013 Feb 252013 Feb 26

Other

Other2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013
CountryTaiwan
CityKaohsiung
Period13/2/2513/2/26

Fingerprint

Hot carriers
Heating
Degradation
Interface states
Temperature

Keywords

  • SiGe channel
  • biaxial stain
  • hot carrier effect
  • mobility
  • strained silicon
  • threshold voltage

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Wang, M. C., Peng, M. R., Ji, L. R., Huang, H. S., Chen, S. Y., Wang, S. J., ... Liu, C-H. (2013). Strained pMOSFETs with SiGe channel and embedded SiGe source/drain stressor under heating and hot-carrier stresses. 371-374. Paper presented at 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, Taiwan. https://doi.org/10.1109/ISNE.2013.6512370

Strained pMOSFETs with SiGe channel and embedded SiGe source/drain stressor under heating and hot-carrier stresses. / Wang, Mu Chun; Peng, Min Ru; Ji, Liang Ru; Huang, Heng Sheng; Chen, Shuang Yuan; Wang, Shea Jue; Hsu, Hong Wen; Liao, Wen Shiang; Liu, Chuan-Hsi.

2013. 371-374 Paper presented at 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, Taiwan.

Research output: Contribution to conferencePaper

Wang, MC, Peng, MR, Ji, LR, Huang, HS, Chen, SY, Wang, SJ, Hsu, HW, Liao, WS & Liu, C-H 2013, 'Strained pMOSFETs with SiGe channel and embedded SiGe source/drain stressor under heating and hot-carrier stresses' Paper presented at 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, Taiwan, 13/2/25 - 13/2/26, pp. 371-374. https://doi.org/10.1109/ISNE.2013.6512370
Wang MC, Peng MR, Ji LR, Huang HS, Chen SY, Wang SJ et al. Strained pMOSFETs with SiGe channel and embedded SiGe source/drain stressor under heating and hot-carrier stresses. 2013. Paper presented at 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, Taiwan. https://doi.org/10.1109/ISNE.2013.6512370
Wang, Mu Chun ; Peng, Min Ru ; Ji, Liang Ru ; Huang, Heng Sheng ; Chen, Shuang Yuan ; Wang, Shea Jue ; Hsu, Hong Wen ; Liao, Wen Shiang ; Liu, Chuan-Hsi. / Strained pMOSFETs with SiGe channel and embedded SiGe source/drain stressor under heating and hot-carrier stresses. Paper presented at 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, Taiwan.4 p.
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abstract = "Reported literatures have investigated the effects of pMOSFETs with embedded SiGe source/drain stressor, but devices incorporated with biaxial strain and embedded SiGe source/drain has not been clearly probed. In this study, the characteristics of devices containing biaxial strain and embedded SiGe source/drain stressor as well as different channel lengths were explored. According to the experimental results at high temperature stress, the saturation current of the embedded SiGe source/drain pMOSFETs degraded 5.5{\%}, which was more serious than Si-control devices' 4.8{\%} degradation. It is presumable that embedded SiGe source/drain induces more traps or interface states on the channel surface. In the channel hot carrier stress, the worst case in current degradation also demonstrated the identical trend.",
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AU - Ji, Liang Ru

AU - Huang, Heng Sheng

AU - Chen, Shuang Yuan

AU - Wang, Shea Jue

AU - Hsu, Hong Wen

AU - Liao, Wen Shiang

AU - Liu, Chuan-Hsi

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